D8-FABLINE, X-ray metrology solution

D8 FABLINE X-Ray Reflectivity Study of Ultra Thin HfO2 Films

XRD Application Report - D8 FABLINE

D8 FABLINE Application Report, X-ray Metrology

As the transistor node technology is moving to 22 nm node and beyond, precise measurement of ultra-thin films is required. The HfO2 gate dielectric films are in the sub 20 A range at this technology node. X-Ray Reflectivity (XRR) is the only non-contact, non-destructive standardless technique to measure thickness, density and roughness of ultra thin amorphous, polycrystalline and single crystal metal films at this thickness range.