Spatially resolved crystal domain identification: Implementing Laue mapping technique on the M4 TORNADO spectrometer

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Polycrystalline silicon wafer w380px
Spatial distribution of crystal domain in a polycrystalline silicon wafer.
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Identification of diffraction peaks in a NdGaO3 crystal.

Diffraction peaks are often considered as a bothersome artifact interfering with XRF information. However, diffraction peaks provide additional information on the nature of the sample as they are related to crystal orientation.

In this webinar, we describe how the M4 TORNADO can be used to identify high and low angle grain boundaries as well as twin boundaries in crystalline materials. From polycrystalline silicon wafers to aluminum samples and welding joint, the method presented in this webinar allows obtain information on the crystals such as size and distribution. We will present the possibilities of the M4 TORNADO for fast measurement of diffraction peaks and identification of crystal domains in crystalline materials. The new approach combines high-speed measurements and full sample area coverage with a high spatial resolution. The technique does not provide information on the orientation of the single crystal but can be used for the identification of single crystalline grains. The detection and visualization of grains or subgrains gives valuable information about the microstructure, which is crucial to evaluate the quality of single crystals as well to properly describe the characteristics of polycrystalline materials.

The webinar will be rounded off by a 15-minute Q&A session where our experts will answer your questions.


  • Dr. Roald Tagle, Sr. Application Scientist Micro-XRF, Bruker Nano Analytics
  • Falk Reinhardt, Application Scientist Micro-XRF, Bruker Nano Analytics

Who should attend?

  • Quality control specialists assuring quality single crystal growth procedures
  • Researchers in R&D

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