Carbon & Oxygen Quantification in Silicon

It is essential for Silicon manufacturers to control their Carbon and Oxygen content, since they can have both, beneficial as well as detrimental effects on semiconductors.

About the Quantification of Carbon and Oxygen Content by FT-IR

FTIR analysis of Carbon and Oxygen in Silicon is fast, sensitive, destruction free and therefore a widely accepted method of Si quality control. Bruker has decades of experience in this field and offers the most powerful and up to date solutions.

Going into detail of Carbon and Oxygen Quantification

Solutions based on research series spectrometers:

  • Room temperature quantification of substitutional Carbon in Si according to ASTM/SEMI MF1391
  • Room temperature quantification of interstitial Oxygen in Si according to ASTM/SEMI MF1188
  • Recommended sample properties: thickness of 0.5 – 2.5 mm, double-sided polished, single crystal or polycrystalline
  • Low temperature analysis for improved sensitivity down to approximately
    10 ppba for carbon
  • Achievable detection limits <400ppba

Solution based on the CryoSAS low temperature Si analyzer

  • Optimized for operation in the industrial environment for highly sensitive low temperature Si analysis with no need of cryogenic liquids
  • Fully automated measurement cycle and data evaluation, including report generation
  • Simultaneously quantify Carbon, Oxygen and shallow impurities according to ASTM/SEMI standards
  • Quantification of B, P and further shallow impurities in single crystal Si down to the low ppta range.
  • Quantification of substitutional carbon in polysilicon or single crystal Si down to the low ppba range
  • Quantification of interstitial oxygen in polysilicon or single crystal Si down to the low ppba range

Solutions based on the SiBrickScan Si ingot analyzer:

  • Dedicated at-line system for quantification of interstitial Oxygen in complete silicon ingots with calibration, linked to ASTM/SEMI 1188 standards
  • Oxygen concentration profile along the longitudinal axis of silicon ingots as result
  • Depending on sample shape and properties an interstitial Oxygen detection limit of <2ppma can be achieved.