Intrinsic, SiGe and compound semiconductors are the all-important building blocks of the modern world of electronics and communication. Scientists and engineers design materials with new characteristics, develop new production processes and ensure the quality of the products. X-ray methods provide a non-destructive way to obtain a large set of physical parameters of the semiconductor materials. With a wavelength that matches the crystalline lattice spacings involved, X-rays are the natural probe for any type semiconductor sample. Absolute analysis results without calibration are possible, in contrast to traditional methods that use wavelengths of the order of a micrometer.
The hot topic for all semiconductor applications is the examination of the samples, even on large 300 mm wafers, with about 50 µm spatial resolution, either for R&D as well as under routine production control conditions. Bruker AXS offers tailor-made solutions to fit your experimental needs.
Bruker Optics provides the expertise and leading FT-IR spectrometer technology for reliable and non-destructive Silicon quality control with infrared light for photovoltaics and electronics. Benefit from more than 30 years of experience in the field of infrared based semiconductor analysis. Bruker Optics FT-IR and RAMAN spectrometers are powerful investigative tools for a whole range of materials.
Bruker's electron microscope analyzers, such as EDS for SEM and TEM, EBSD, WDS and Micro-XRF, allow the analysis of texture (EBSD) and the element distributions down to ppm with high spatial resolution. Particularly fast analysis, such as needed in quality control or for large sample areas, is possible using a high collection angle device, such as the Bruker XFlash FlatQUAD detector.
Furthermore, Bruker's benchtop micro-XRF analyzers, such as the M4 TORNADO and the M4 TORNADOPLUS offer the trace element detection sensitivity of bulk XRF, while providing spatially resolved distribution analysis with spot sizes below 20 µm and detection ranges from Na for the M4 TORNADO and C for the M4 TORNADOPLUS up to Am. The M4 TORNADOPLUS with its light element tube and dual large area, light element silicon drift detectors, offers 10 times higher sensitivity for light elements over the M4 TORNADO. Furthermore, the M4 TORNADOPLUS boasts a patented aperture management system offering a narrower beam and high depth of field.