The base model of our "SE" product line, the FilmTek™ SE automated benchtop spectroscopic ellipsometer offers users a streamlined option for quickly and easily collecting highly precise, repeatable measurements on a range of thin and ultra-thin film samples.
This system enables fast, accurate, uncomplicated measurement of film thickness, refractive index, and extinction coefficient with a measurable thickness range of <1 Å to 50 µm. It is capable of measuring almost any optically homogenous, translucent single-layer or small multilayer film within this range. Based on an advanced rotating compensator design, this system delivers optimal measurement performance on virtually all such film samples, even those deposited on silicon or glass substrates.
This budget-friendly ellipsometer is ideally suited for use in academic and R&D settings, particularly for investigating the thickness and uniformity of ultra-thin films (with 0.03 Å repeatability on native oxide).
Enables simultaneous determination of:
Virtually all translucent films ranging in thickness from less than 100 Å to approximately 50 µm can be measured with high precision. Typical application areas include:
With flexible hardware and software that can be easily modified to satisfy unique customer requirements, particularly in academic and R&D environments.
|Film Thickness Range||0 Å to 50 µm|
|Film Thickness Accuracy||±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm|
|Spectral Range||380 nm - 950 nm|
|Measurement Spot Size||3 mm|
|Sample Size||2 mm - 300 mm (150 mm standard)|
|Spectral Resolution||0.3 nm|
|Light Source||Regulated halogen lamp (10,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||~2 sec per site (e.g., oxide film)|
|Film(s)||Thickness||Measured Parameters||Precision (1σ)|
|Oxide / Si||0 - 1000 Å||t||0.03 Å|
|1000 - 500,000 Å||t||0.005%|
|1000 Å||t , n||0.2 Å / 0.0001|
|15,000 Å||t , n||0.5 Å / 0.0001|
|150.000 Å||t , n||1.5 Å / 0.00001|
|Nitride / Si||200 - 10,000 Å||t||0.02%|
|500 - 10,000 Å||t , n||0.05% / 0.0005|
|Photoresist / Si||200 - 10,000 Å||t||0.02%|
|500 - 10,000 Å||t , n||0.05% / 0.0002|
|Polysilicon / Oxide / Si||200 - 10,000 Å||t Poly , t Oxide||0.2 Å / 0.1 Å|
|500 - 10,000 Å||t Poly , t Oxide||0.2 Å / 0.0005|