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STEM in SEM Capabilities with Built-in ARGUS Imaging System

ARGUS the All-Seeing Mythical Giant is Back

Like its predecessor, OPTIMUS 2 detector head has been designed with built-in ARGUSTM system to provide STEM in SEM imaging capabilities. With three Si diodes at its front edge and one Si diode at the center of its screen, OPTIMUS 2 provides:

  • Dark Field (DF)-like imaging
  • Bright Field (BF)-like imaging while in TKD mapping position
  • Imaging at speeds of up to 125,000 pixels/sec
  • Fully automatic signal optimization to create images with unequalled quality and detail

The new BF-like imaging capability is particularly useful for drift correction during mapping as well as for near real-time visualization of samples during dynamic experiments like in-situ tensile testing, heating, and electrical biasing of electron transparent samples.

Contact an expert Discover QUANTAX EBSD
2.8 Mpixel DF-like image (left) and zoomed view of highlighted area of a 20 nm gold film deposited on amorphous Si₃N₄ membrane showing sub-10 nm annealing twins. Image was acquired in 66 seconds using a probe current of 800 pA and an accelerating voltage of 30 kV. Scale bars in the main image and zoomed view image represent 400 nm and 50 nm.

DF-like & BF-like Images Acquired from Various Materials

BF-like image of a Ru thin film acquired in 3 s using steps of 1 nm, a probe current of 400 pA and an accelerating voltage of 30 kV
Ultra-high resolution BF-like image of a Ru thin film acquired in 3 s using steps of 0.5 nm, a probe current of 400 pA and an accelerating voltage of 30 kV
DF-like image of a Ru thin film acquired in 3 s using steps of 1 nm, a probe current of 800 pA and an accelerating voltage of 30 kV
4 Mpixel, plane-view BF-like image of a Ge-Sb-Te (GST) thin film deposited on a TEM grid with Silicon Nitride support film. Image was acquired in 2:05 min using steps of 5 nm, a probe current of 2 nA and an accelerating voltage of 30 kV. Sample is courtesy of Prof. Aaron Lindenberg and his group at Stanford University in USA.
4 Mpixel, plane-view DF-like image of a Ge-Sb-Te (GST) thin film deposited on a TEM grid with Silicon Nitride support film. Image was acquired in 2:05 min using steps of 5 nm, a probe current of 2 nA and an accelerating voltage of 30 kV. Sample is courtesy of Prof. Aaron Lindenberg and his group at Stanford University in USA.
BF-like image of a Ru thin film acquired in 8 s using steps of 1 nm, a probe current of 700 pA and an accelerating voltage of 30 kV
BF-like image of a Ru thin film acquired in 8 s using steps of 0.5 nm, a probe current of 700 pA and an accelerating voltage of 30 kV
DF-like image of a Ru thin film acquired in 8 s using steps of 1 nm, a probe current of 700 pA and an accelerating voltage of 30 kV
DF-like image of a Ru thin film acquired in 8 s using steps of 0.5 nm, a probe current of 700 pA and an accelerating voltage of 30 kV
Plane-view DF-like image of a Pt thin film deposited on Si wafer substrate and thinned using the dimpling method. The image was acquired in 14 s using steps of 2 nm, a probe current of 1.7 nA and an accelerating voltage of 30 kV. Thanks to Dr. Wolfgang Grünewald from Leica Microsystems in Germany, for preparing/thinning the TKD sample.

STEM in SEM Analysis with eWARP TKD

This webnote discusses STEM in SEM analysis using our legacy TKD solution, the eFlash FS detector equipped with an OPTIMUS 2 detector head and ARGUS, which has now been replaced by our next-generation eWARP TKD detector for ultra-fast, high-resolution transmission kikuchi diffraction. 

The hybrid pixel sensor technology of the new eWARP provides on-chip binning capability enabling live BF/DF imaging for focusing directly in ESPRIT for best analysis results. Furthermore, eWARP's newly designed pixel array sensor renders the FSD diodes, used on conventional EBSD detectors, redundant, reducing detector complexity, increasing reliability and freeing up space in the vicinity of the sample/stage.

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