FilmTek 6000 PAR-SE Robotic
FilmTek 6000 PAR-SE Robotic
The FilmTek™ 6000 PAR-SE combines patented Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technology to independently measure film thickness and index of refraction. By independently measuring index and thickness, the FilmTek 6000 PAR-SE is far more sensitive to changes in films, particularly films within multi-layer stacks, than existing metrology tools that rely on conventional ellipsometry and reflectometry techniques. This is ideal for both ultra-thin and thick multi-layer film stacks used in forming complex device structures.
Measurement Capabilities
Enables simultaneous determination of:
- Multiple layer thicknesses
- Indices of refraction [ n(λ) ]
- Extinction (absorption) coefficients [ k(λ) ]
- Energy band gap [ Eg ]
- Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
- Surface roughness
- Constituent, void fraction
- Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
- Film gradient
System Components
Standard:
- Spectroscopic ellipsometry with rotating compensator design (295 nm - 1700 nm)
- Multi-angle, polarized spectroscopic reflection (190 nm - 1700 nm)
- Measures film thickness and index of refraction independently
- Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
- Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
- Patented parabolic mirror technology – small spot size measures within a 50×50 µm feature
- Cassette to cassette wafer handling
- Pattern recognition (Cognex)
- FOUP or SMIF compatible
- SECS/GEM
- Advanced material modeling software
- Bruker's generalized material model with advanced global optimization algorithms
Typical Application Areas
Front End Semiconductor
Perform fast, accurate, and repeatable multi-layer film thickness and refractive index measurements on patterned device wafers for front end semiconductor manufacturing.
FilmTek systems enable process control of oxides, nitrides, ONO, Oxide / Nitride / Cu, polysilicon / oxide, AlN, TaN, TiN, SiGex and composition control, resist, Si3N4/GaAs, ARC, gate oxide, and GaAs films, CMP on Cu, and many other materials encountered throughout the entire wafer fabrication process.
Technical Specifications
| Film Thickness Range | 0 Å to 150 µm |
|---|---|
| Film Thickness Accuracy | ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm |
| Spectral Range | 190 nm - 1700 nm (220 nm - 1000 nm is standard) |
| Measurement Spot Size | 50 µm |
| Sample Size | 2 mm - 300 mm (150 mm standard) |
| Spectral Resolution | 0.3 nm - 2nm |
| Light Source | Regulated deuterium-halogen lamp (2,000 hrs lifetime) |
| Detector Type | 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR) |
| Computer | Multi-core processor with Windows™ 10 Operating System |
| Measurement Time | ~2 sec per site (e.g., oxide film) |
Performance Specifications
| Film(s) | Thickness | Measured Parameters | Precision (1σ) |
|---|---|---|---|
| Oxide / Si | 0 - 1000 Å | t | 0.03 Å |
| 1000 - 500,000 Å | t | 0.005% | |
| 1000 Å | t , n | 0.2 Å / 0.0001 | |
| 15,000 Å | t , n | 0.5 Å / 0.0001 | |
| 150.000 Å | t , n | 1.5 Å / 0.00001 | |
| Nitride / Si | 200 - 10,000 Å | t | 0.02% |
| 500 - 10,000 Å | t , n | 0.05% / 0.0005 | |
| Photoresist / Si | 200 - 10,000 Å | t | 0.02% |
| 500 - 10,000 Å | t , n | 0.05% / 0.0002 | |
| Polysilicon / Oxide / Si | 200 - 10,000 Å | t Poly , t Oxide | 0.2 Å / 0.1 Å |
| 500 - 10,000 Å | t Poly , t Oxide | 0.2 Å / 0.0005 |