FilmTek 2000 PAR-SE Robotic
FilmTek 2000 PAR-SE Robotic
FilmTek 2000 PAR-SE uses a multi-angle and multi-modal approach to address applications beyond what is possible with conventional ellipsometry or reflectometry. This system leverages exclusive FilmTek™ technologies to measure film thickness and refractive index independently and with high resolution. It uses specialized optics alongside patented data processing and modeling to return results within seconds, enabling real-time process control. FilmTek 2000 PAR-SE is ideal for automated inline measurement of patterned thin-film and multilayer film stacks used in complex device structures, including ONO film stacks, high-k and low-k materials, polycrystalline and amorphous Si, and SiGe.
Advanced Technology Designed Specifically for Thin-Film Measurements
FilmTek 2000 PAR-SE and its accompanying advanced material modeling software make even the most rigorous of measurement tasks on blanket or patterned wafers intuitive and reliable.
FilmTek 2000 PAR-SE delivers a combination of:
- Unmatched measurement precision at high spatial resolutions, with 0.03 Å thickness repeatability and high-resolution refractive index measurements.
- Versatile application capabilities that include automated inline measurements of traditionally challenging ultrathin films in multilayer stacks.
- Advanced material modeling to gain rich information behind film thickness and refractive index, such as surface roughness, crystallinity, and bandgap.
Proprietary Multi-Angle Design
FilmTek 2000 PAR-SE utilizes a rotating-compensator-design ellipsometer, patented parabolic mirror technology, and deep UV (DUV) multi-angle reflectometry features to extend measurement capabilities beyond what is possible with conventional systems.
Multi-angle differential polarimetry (MADP)—Combines reflectometry (0°) and ellipsometry (70°) at the same location to enable independent and unambiguous thickness and index determination even for very thin films.
Multi-angle differential power spectral density (DPSD)—Uses polarized reflectometry spectra at normal (0°) and oblique (70°) incidence to independently determine thickness and index, resulting in highest index resolution compared to competing techniques.
Unambiguous, Accurate Results in Seconds
Traditional ellipsometry determines refractive index by measuring a polarization shift, which can be time-consuming and produce multiple solutions. FilmTek 2000 PAR-SE instead analyzes wavelength shift and amplitude change as a function of measurement angle to yield a single precise and repeatable solution in a matter of seconds. The DPSD technique converts standard reflectance spectra into a power spectral density plot, offering not only an improved method of determining refractive index, but also an additional fitting method for calculating single and multilayer film thicknesses.
FilmTek 2000 PAR-SE delivers:
- Highly accurate reflection measurements across a broad wavelength range, and
- High spatial resolution for precise location targeting.
Typical Application Areas
Inline Semiconductor Manufacturing
Perform fast, accurate, and repeatable multi-layer film thickness and refractive index measurements on patterned device wafers for semiconductor manufacturing.
FilmTek systems enable process control of oxides, nitrides, ONO, Oxide / Nitride / Cu, polysilicon / oxide, AlN, TaN, TiN, SiGex and composition control, resist, Si3N4/GaAs, ARC, gate oxide, and GaAs films, CMP on Cu, and many other materials encountered throughout the entire wafer fabrication process.
Multi-layer Thin Films
Collect accurate, precise production measurements of thin films and multi-layers on patterned device wafers for front and back-end manufacturing.
Filmtek advanced multi-angle and multi-modal technology enables in-line composition control (e.g., %Ge in SiGex) for thin films, Oxide / Nitride / Cu, CMP process monitoring, and measurement of thin metal oxide thickness (SnO, CuO, InO) with sub-Angstrom repeatability to prevent non-wet open failures in bonding processes.
MEMS
Perform fully-automated film thickness and refractive index measurements of oxide, nitride, oxide/nitride, ONO, amorphous carbon, resist, and oxide/polysilicon/oxide films on patterned device wafers.
Fully-automated FilmTek ellipsometry and reflectometry tools feature cassette-to-cassette wafer handling, 50µm spot size, pattern recognition, and SECS/GEM with a best-in-class combination of performance and price.
New Materials
Characterize new materials with a wide range of rapid, accurate, and reliable R&D measurement capabilities.
FilmTek benchtop tools with automated wafer mapping enable measurements of multiple layer thicknesses, indices of refraction [n(λ)], extinction (absorption) coefficients [k(λ)], energy band gap [Eg], composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.), surface roughness, constituent / void fraction, crystallinity / amorphization (e.g., degree of crystallinity of Poly-Si or GeSbTe films), and film gradient.
Unknown/Complex Materials
Independently and unambiguously determine thickness (t), refractive index (n), and extinction coefficient (k) for unknown materials.
FilmTek combined multiple-angle reflectometry and rotating compensator design ellipsometry systems deliver unprecedented performance with high-throughput automated mapping of patterned and un-patterned samples, 0.03 Angström repeatability for thin films, an extended thickness range from bare substrate to 50µm, and sub-Angström accuracy for complex, multi-layer thin film structures.
FilmTek 2000 PAR-SE Robotic Select Specifications
Each wafer manufacturing facility and semiconductor fab has its own specific requirements and challenges. Our listed product specifications and offerings are always a starting point for a conversation with our experts to determine how our capabilities can meet your needs.
| Measurement Function | Film thickness, index of refraction (n) and extinction coefficient (k), roughness, crystallinity, composition (e.g., %Ge in SiGe) |
| Automated Stage | 200 mm standard or 300 mm optional |
| Measurement Time | <2 s per site (e.g., oxide film) |
| Film Thickness Range | 0 Å (bare substrate) to 150 μm |
| Film Thickness Precision (1σ) |
0 to 1000 Å Oxide/Si (t): 0.03 Å |
How Can We Help?
Bruker partners with our customers to solve real-world application issues. We develop next-generation technologies and help customers select the right system and accessories. This partnership continues through training and extended service, long after the tools are sold.
Our highly trained team of support engineers, application scientists and subject-matter experts are wholly dedicated to maximizing your productivity with system service and upgrades, as well as application support and training.