FilmTek 2000 PAR-SE Robotic
FilmTek 2000 PAR-SE Robotic
FilmTek 2000 PAR-SE employs a multi-angle, multi-modal approach to tackle applications beyond the capabilities of conventional ellipsometry or reflectometry techniques. Leveraging exclusive FilmTek™ technologies, this system measures film thickness and refractive index independently with exceptional resolution. Its advanced optics, combined with patented data processing and modeling, deliver results within seconds—enabling real-time process control. Designed for automated inline measurement, FilmTek 2000 PAR-SE excels in analyzing patterned thin films and multilayer stacks used in complex device structures. Typical applications include ONO film stacks, high-k and low-k materials, polycrystalline and amorphous silicon, and SiGe.
Advanced Technology Designed Specifically for Thin-Film Measurements
FilmTek 2000 PAR-SE and its accompanying advanced material modeling software make even the most rigorous of measurement tasks on blanket or patterned wafers intuitive and reliable.
FilmTek 2000 PAR-SE delivers a combination of:
- Unmatched measurement precision at high spatial resolutions, with 0.03 Å thickness repeatability and high-resolution refractive index measurements.
- Versatile application capabilities that include automated inline measurements of traditionally challenging ultrathin films in multilayer stacks.
- Advanced material modeling to gain rich information behind film thickness and refractive index, such as surface roughness, crystallinity, and bandgap.
Proprietary Multi-Angle Design
FilmTek 2000 PAR-SE utilizes a rotating-compensator-design ellipsometer, patented parabolic mirror technology, and deep UV (DUV) multi-angle reflectometry features to extend measurement capabilities beyond what is possible with conventional systems.
Multi-angle differential polarimetry (MADP)—Combines reflectometry (0°) and ellipsometry (70°) at the same location to enable independent and unambiguous thickness and index determination even for very thin films.
Multi-angle differential power spectral density (DPSD)—Uses polarized reflectometry spectra at normal (0°) and oblique (70°) incidence to independently determine thickness and index, resulting in highest index resolution compared to competing techniques.
Unambiguous, Accurate Results in Seconds
Traditional ellipsometry determines refractive index by measuring a polarization shift, which can be time-consuming and produce multiple solutions. FilmTek 2000 PAR-SE instead analyzes wavelength shift and amplitude change as a function of measurement angle to yield a single precise and repeatable solution in a matter of seconds. The DPSD technique converts standard reflectance spectra into a power spectral density plot, offering not only an improved method of determining refractive index, but also an additional fitting method for calculating single and multilayer film thicknesses.
FilmTek 2000 PAR-SE delivers:
- Highly accurate reflection measurements across a broad wavelength range, and
- High spatial resolution for precise location targeting.
Typical Application Areas
Inline Semiconductor Manufacturing
Perform fast, accurate, and repeatable multi-layer film thickness and refractive index measurements on patterned device wafers for semiconductor manufacturing.
FilmTek systems enable process control of oxides, nitrides, ONO, Oxide / Nitride / Cu, polysilicon / oxide, AlN, TaN, TiN, SiGex and composition control, resist, Si3N4/GaAs, ARC, gate oxide, and GaAs films, CMP on Cu, and many other materials encountered throughout the entire wafer fabrication process.
Multi-layer Thin Films
Collect accurate, precise production measurements of thin films and multi-layers on patterned device wafers for front and back-end manufacturing.
Filmtek advanced multi-angle and multi-modal technology enables in-line composition control (e.g., %Ge in SiGex) for thin films, Oxide / Nitride / Cu, CMP process monitoring, and measurement of thin metal oxide thickness (SnO, CuO, InO) with sub-Angstrom repeatability to prevent non-wet open failures in bonding processes.
MEMS
Perform fully-automated film thickness and refractive index measurements of oxide, nitride, oxide/nitride, ONO, amorphous carbon, resist, and oxide/polysilicon/oxide films on patterned device wafers.
Fully-automated FilmTek ellipsometry and reflectometry tools feature cassette-to-cassette wafer handling, 50µm spot size, pattern recognition, and SECS/GEM with a best-in-class combination of performance and price.
New Materials
Characterize new materials with a wide range of rapid, accurate, and reliable R&D measurement capabilities.
FilmTek benchtop tools with automated wafer mapping enable measurements of multiple layer thicknesses, indices of refraction [n(λ)], extinction (absorption) coefficients [k(λ)], energy band gap [Eg], composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.), surface roughness, constituent / void fraction, crystallinity / amorphization (e.g., degree of crystallinity of Poly-Si or GeSbTe films), and film gradient.
Unknown/Complex Materials
Independently and unambiguously determine thickness (t), refractive index (n), and extinction coefficient (k) for unknown materials.
FilmTek combined multiple-angle reflectometry and rotating compensator design ellipsometry systems deliver unprecedented performance with high-throughput automated mapping of patterned and un-patterned samples, 0.03 Angström repeatability for thin films, an extended thickness range from bare substrate to 50µm, and sub-Angström accuracy for complex, multi-layer thin film structures.
FilmTek 2000 PAR-SE Robotic Select Specifications
Each wafer manufacturing facility and semiconductor fab has its own specific requirements and challenges. Our listed product specifications and offerings are always a starting point for a conversation with our experts to determine how our capabilities can meet your needs.
| Measurement Function | Film thickness, index of refraction (n) and extinction coefficient (k), roughness, crystallinity, composition (e.g., %Ge in SiGe) |
| Automated Stage | 200 mm standard or 300 mm optional |
| Measurement Time | <2 s per site (e.g., oxide film) |
| Film Thickness Range | 0 Å (bare substrate) to 150 μm |
| Film Thickness Precision (1σ) | 0 to 1000 Å Oxide/Si (t): 0.03 Å |