The FilmTek™ 4000 multi-angle reflectometry system delivers fully automated wafer metrology optimized for photonic integrated circuit (PIC) manufacturing on 300 mm patterned silicon wafers. Utilizing proprietary FilmTek technology, this system uniquely enables optical component manufacturers to improve the reliability and efficiency of production processes and increase the functional yield of their products.
By combining multi-angle reflectometry and our patented multi-angle Differential Power Spectral Density (DPSD) analysis capability, FilmTek 4000 delivers the precision, refractive index resolution, and repeatability required to meet waveguide manufacturing specifications. Measurement resolution is optimized to deliver best-in-class performance, providing independent thickness and index measurements (TE and TM modes) of each cladding and core layer with refractive index resolution up to 2×10-5. This is 100x higher than the refractive index resolution of competing optical techniques, and 10x that of the best prism coupler contact systems.
FilmTek 4000 excels in the characterization of semiconductors for waveguide applications where refractive index is critical (e.g., multilayer nitride structures). It resolves the index and thickness of such structures, including thick films and multilayers on silicon (Silicon Oxide, Silicon Nitride, Poly Silicon), with exceptionally high precision and, with its additional advanced options, can deliver enhanced automation and additional measurement capabilities.
This system is available in a variety of configurations, ranging from table-top systems suitable for R&D to fully automated, floor-standing production tools.
Enables simultaneous determination of:
FilmTek 4000 employs our patented DPSD (Differential Power Spectral Density) technique for high precision refractive index measurement. Spectroscopic reflection data are gathered at normal incidence and 70 degrees. PSD processing results in two peaks in the Power Spectral Density domain. The ratio of their positions is a function of the index of refraction of the film, and the angle of incidence of the oblique measurement. This ratio is used to calculate the index. Once the index is known, the thickness can be calculated from the optical thickness of the normal incident peak.
Typical application areas include:
|Film Thickness Range||0 Å to 250 µm (with SE option)|
|Film Thickness Accuracy||±1.5 Å for NIST traceable standard oxide 5000 Å to 1 µm|
|Precision (1σ)||5 µm Oxide (t,n): 2Å / 0.00002|
|Spectral Range||380 nm - 1700 nm (380 nm - 1000 nm is standard)|
|Measurement Spot Size||1 mm (normal incidence); 2 mm (70°)|
|Sample Size||2 mm - 300 mm (150 mm is standard)|
|Spectral Resolution||Visible: 0.3 nm / NIR: 2 nm|
|Light Source||Regulated halogen lamp (10,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)|
|Automated Stage||150 mm - 300 mm (200 mm is standard)|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||<5 sec per site (e.g., oxide film)|