Ellipsometers and Reflectometers

FilmTek 4000

Fully automated wafer metrology optimized for photonic integrated circuit manufacturing

Highlights

FilmTek 4000

The FilmTek™ 4000 multi-angle reflectometry system delivers fully automated wafer metrology optimized for photonic integrated circuit (PIC) manufacturing on 300 mm patterned silicon wafers. Utilizing proprietary FilmTek technology, this system uniquely enables optical component manufacturers to improve the reliability and efficiency of production processes and increase the functional yield of their products.

 

By combining multi-angle reflectometry and our patented multi-angle Differential Power Spectral Density (DPSD) analysis capability, FilmTek 4000 delivers the precision, refractive index resolution, and repeatability required to meet waveguide manufacturing specifications. Measurement resolution is optimized to deliver best-in-class performance, providing independent thickness and index measurements (TE and TM modes) of each cladding and core layer with refractive index resolution up to 2×10-5. This is 100x higher than the refractive index resolution of competing optical techniques, and 10x that of the best prism coupler contact systems.

 

FilmTek 4000 excels in the characterization of semiconductors for waveguide applications where refractive index is critical (e.g., multilayer nitride structures). It resolves the index and thickness of such structures, including thick films and multilayers on silicon (Silicon Oxide, Silicon Nitride, Poly Silicon), with exceptionally high precision and, with its additional advanced options, can deliver enhanced automation and additional measurement capabilities.

 

This system is available in a variety of configurations, ranging from table-top systems suitable for R&D to fully automated, floor-standing production tools.

PIC-optimized
wafer metrology
Enables the precision and repeatability required to meet waveguide manufacturing specifications.
Fully automated
PIC device measurement
Delivers faster, more reliable measurements with less uncertainty than is achievable by comparable non-destructive optical techniques.
Whole wafer
non-destructive measurements
Provide very high sensitivity to non-uniformity without loss of product yield.
Learn more about this instrument.
Contact Us

Features

Features

Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses from 0Å to 250µm (with SE option)
  • Optical properties from 400nm-1700nm
  • TE and TM indices of refraction [ n(λ) ]

 

  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Constituent, void fraction

System Components

Standard:

  • Multi-angle, polarized spectroscopic reflection (400nm-1700nm)
  • Patented Multi-Angle Differential Power Spectral Density (MADP) analysis
  • Patented Differential Power Spectral Density (DPSD) processing
  • Measures film thickness and index of refraction independently
  • 2×10-5 refractive index resolution
  • Whole wafer measurement
  • Automated stage with autofocus
  • Automated beam alignment
  • Camera for imaging measurement location
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms

Optional:

  • Spectroscopic ellipsometry with rotating compensator design
  • Hot plate for characterization of refractive index and thermal expansion as a function of temperature
  • Cassette to cassette wafer handling
  • FOUP and SMIF compatible
  • Pattern recognition (Cognex)
  • SECS/GEM

FilmTek 4000 Methodology

FilmTek 4000 employs our patented DPSD (Differential Power Spectral Density) technique for high precision refractive index measurement. Spectroscopic reflection data are gathered at normal incidence and 70 degrees. PSD processing results in two peaks in the Power Spectral Density domain. The ratio of their positions is a function of the index of refraction of the film, and the angle of incidence of the oblique measurement. This ratio is used to calculate the index. Once the index is known, the thickness can be calculated from the optical thickness of the normal incident peak.

Applications

Applications

Typical Application Areas

Typical application areas include:

  • Photonics and telecom

Specifications

Technical Specifications

Film Thickness Range 0 Å to 250 µm (with SE option)
Film Thickness Accuracy ±1.5 Å for NIST traceable standard oxide 5000 Å to 1 µm
Precision (1σ) 5 µm Oxide (t,n): 2Å / 0.00002
Spectral Range 380 nm - 1700 nm (380 nm - 1000 nm is standard)
Measurement Spot Size 1 mm (normal incidence); 2 mm (70°)
Sample Size 2 mm - 300 mm (150 mm is standard)
Spectral Resolution Visible: 0.3 nm / NIR: 2 nm
Light Source Regulated halogen lamp (10,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Automated Stage 150 mm - 300 mm (200 mm is standard)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time <5 sec per site (e.g., oxide film)

Contact Expert

Contact Us

* Please fill out the mandatory fields.

Please enter your first name
Please enter your last name
Please enter your e-mail address
Please enter a valid phone number
Please enter your Company/Institution
What best describes your current interest?
Please add me to your email subscription list so I can receive webinar invitations, product announcements and events near me.
Please accept the Terms and Conditions

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.