The FilmTek™ 2000 automated benchtop spectroscopic reflectometer delivers rapid, reliable, and accurate measurement of the layer thickness and optical properties of nearly any unpatterned thin film 5 nm - 150 µm thick, with far lower cost of ownership than competing automated benchtop reflectometry systems.
Featuring our most streamlined spectroscopic reflectometer design, FilmTek 2000 combines a DUV-NIR fiber-optic spectrophotometer, automated stage, computer, and advanced FilmTek software to ensure intuitive operation and easy access to reliable information about sample properties. FilmTek 2000's standard configuration balances convenience, reliability, and speed while enabling complete automation, 2D and 3D maps of target parameters, and simultaneous determination of multiple film characteristics in less than 1 second per measurement site.
Enables simultaneous determination of:
Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:
With flexible hardware and software that can be easily modified to satisfy unique customer requirements in academic, R&D, and production environments.
|Film Thickness Range||5 nm to 150 µm|
|Film Thickness Accuracy||±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm|
|Spectral Range||190 nm - 1700 nm (240 nm - 1000 nm is standard)|
|Measurement Spot Size||2 mm - 5 mm (5 mm standard)|
|Sample Size||2 mm - 300 mm (150 mm is standard)|
|Spectral Resolution||0.3 - 2 nm|
|Light Source||Regulated deuterium-halogen lamp (2,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||<1 sec per site (e.g., oxide film)|
|Data Acquisition Time||0.2 sec|
|Film(s)||Thickness||Measured Parameters||Precision (1σ)|
|Oxide / Si||200 - 500 Å||t||0.5 Å|
|500 - 10,000 Å||t||0.25 Å|
|1000 Å||t , n||0.25 Å / 0.001|
|Nitride / Si||200 - 10,000 Å||t||0.25 Å|
|Photoresist / Si||200 - 10,000 Å||t||0.5 Å|
|a-Si / Oxide / Si||200 - 10,000 Å||t||0.5 Å|