Ellipsometers and Reflectometers

FilmTek 2000M

Micro-spot size benchtop reflectometry for patterned thin to very thick film applications requiring a very small spot size

FilmTek 2000M

The FilmTek™ 2000M benchtop micro-spot size benchtop reflectometer provides unparalleled versatility and performance, meeting the needs of patterned film applications requiring a very small spot size.


This system allows for measurement spot sizes as small as 2 µm on both thin and very thick films without the signal degradation and optical artifacts inherent to conventional film metrology systems. Unlike these systems, FilmTek 2000M achieves consistently high signal fidelity during small- and micro-spot measurements by incorporating our patented low-power objective optical design with a nearly collimated beam. This design — characteristic of our "M" series instruments — enables FilmTek 2000M to deliver greater accuracy and reliability than conventional high power objective-based instruments on challenging samples and in applications requiring micro-spot size measurements.


Options are available to optimize FilmTek 2000M's design for fully-automated imaging-based critical dimension (CD) measurement of patterned samples, allowing for simultaneous CD and film thickness measurement.

Very thick film
sample compatibility
Enables accurate characterization of samples far outside the measurable thickness range of competing systems.
optical design
Achieves small measurement spot sizes down t 2 μm.
spectroscopic reflectometer
Enables measurement on a wide range of film types and thicknesses in many diverse application areas.
Learn more about this instrument.
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Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Critical dimension (CD) measurement

System Components


  • Spectroscopic reflection measurement
  • 5nm to 350µm film thickness range
  • 2µm spot size (5×10µm standard)
  • Automated stage with autofocus
  • Camera for imaging measurement location
  • Pattern recognition
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms


  • Automated wafer handling

Typical Application Areas

Typical application areas include:

  • Wafer/CD metrology
  • Compound semiconductor
  • Data storage
  • Flat panel display

With flexible software that can be easily modified to satisfy unique customer requirements in  R&D and production environments.

Technical Specifications

Film Thickness Range 5 nm to 350 µm (5 nm to 150 µm is standard)
Film Thickness Accuracy ±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm
Spectral Range 380 nm - 1700 nm (380 nm - 1000 nm is standard)
Measurement Spot Size 2 µm (5x10 µm standard with 10x objective)
Sample Size 2 mm - 300 mm (150 mm is standard)
Spectral Resolution 0.3 - 2 nm
Light Source Regulated halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time <1 sec per site (e.g., oxide film)

Performance Specifications

Film(s) Thickness Measured Parameters Precision ()
Oxide / Si 500 - 1000 nm t 0.025 nm
1 - 150 µm t 0.005%

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