The FilmTek™ 3000 reflection-transmission spectrophotometer offers users a reliable, efficient, single-instrument solution for characterizing unpatterned thin films deposited on transparent substrates, particularly very thin absorbing films like those used in LED/OLED, solar photovoltaic, and flat panel display applications.
This system combines DUV-NIR fiber-optic spectrophotometers with proprietary dispersion and material modeling capabilities in a single fully automated, high-efficiency instrument. This design enables simultaneous collection of the reflection and transmission data needed to investigate the properties and uniformity of unpatterned absorbing thin films. The FilmTek 3000 is consequently able to overcome multiple R&D and manufacturing challenges associated with these films.
Optional capabilities and hardware can be added to this system to support more specialized measurement requirements, including polarimetry measurements and large-scale automated sample stages to support flat panel display applications.
Enables simultaneous determination of:
Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:
With flexible hardware and software that can be easily modified to satisfy unique customer requirements in academic, R&D, and production environments.
|Film Thickness Range||3 nm to 150 µm|
|Film Thickness Accuracy||±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm|
|Spectral Range||220 nm - 1700 nm (240 nm - 1000 nm is standard)|
|Measurement Spot Size||3 mm|
|Sample Size||2 mm - 500 mm (150 mm is standard; larger stages available upon request)|
|Spectral Resolution||0.3 - 2 nm|
|Light Source||Regulated deuterium-halogen lamp (2,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||<1 sec per site (e.g., oxide film)|
|Film(s)||Thickness||Measured Parameters||Precision (1σ)|
|Oxide / Si||200 - 500 Å||t||0.5 Å|
|500 - 10,000 Å||t||0.25 Å|
|1000 Å||t , n||0.25 Å / 0.001|
|Nitride / Si||200 - 10,000 Å||t||0.5 Å|
|Photoresist / Si||200 - 10,000 Å||t||0.5 Å|
|a-Si / Oxide / Si||200 - 10,000 Å||t||0.5 Å|