The FilmTek™ 2000 PAR benchtop spectroscopic reflectometer is an economical solution for high-throughput, fully automated mapping of patterned wafers in R&D and production environments. It is specifically designed to address a broad range of wafer-based technology applications in silicon semiconductor, LED/OLED, and data storage.
Expanding upon FilmTek 2000's proprietary DUV-NIR spectroscopic reflectometry technology, FilmTek 2000 PAR features integrated automated wafer handling, pattern recognition, and patented parabolic mirror-based micro-spot measurement capabilities (50 µm standard, down to 13 µm). This system delivers best-in-class measurement of patterned wafers that is more efficient, intuitive, and sensitive to local non-uniformity than comparable reflectometers, even on challenging samples.
The FilmTek 2000 PAR's fully integrated, advanced material modeling software supports both built-in standard and user-defined wafer map patterns, providing rapid generation of 2D and 3D data maps of any measured parameter. Optional Cognex pattern recognition, cassette-to-cassette wafer handling, and SECS/GEM compatibility can be added to further optimize the system's measurement capabilities and performance to your specific application.
Enables simultaneous determination of:
Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:
With flexible hardware and software that can be easily modified to satisfy unique customer requirements in R&D and production environments.
|Film Thickness Range||3 nm to 150 µm|
|Film Thickness Accuracy||±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm|
|Spectral Range||190 nm - 1700 nm (240 nm - 1000 nm is standard)|
|Measurement Spot Size||13 µm - 300 µm (50 µm is standard)|
|Wafer Size||50 mm - 300 mm (150 mm standard)|
|Spectral Resolution||0.3 - 2 nm|
|Light Source||Regulated deuterium-halogen lamp (2,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||<1 sec per site (e.g., oxide film)|
|Data Acquisition Time||0.2 sec|
|Film(s)||Thickness||Measured Parameters||Precision (1σ)|
|Oxide / Si||200 - 500 Å||t||0.5 Å|
|500 - 10,000 Å||t||0.25 Å|
|1000 Å||t , n||0.25 Å / 0.001|
|Nitride / Si||200 - 10,000 Å||t||0.25 Å|
|Photoresist / Si||200 - 10,000 Å||t||0.5 Å|
|a-Si / Oxide / Si||200 - 10,000 Å||t||0.5 Å|