Banner 2020 webinar XFlash 100 oval blue bg

New! Windowless high collection angle EDS detector with 100 mm² oval silicon drift detector area

This webinar took place on December 03rd 2020

Register to download slides & media

Additional Documents

View recording

Download slides

Overview

We announce the release of a new large collection angle EDS detector with an oval shaped SDD area of 100 mm2, the XFlash® 6T-100 oval for TEM and STEM and the XFlash® 6-100 oval for SEM and T-SEM.

This webinar will inform about the detector features, specifics of microscope detector geometries as well as respective data acquisition and analysis. Qualitative and quantitative element mapping for different large collection angle EDS settings will be explained (Fig. 1, 2) and related to results obtained by standard EDS.

The detector has been shown to provide collection angles between 0.4 sr to 0.7 sr at high take-off angles of around 12° on TEM/STEM and collection angles of up to 0.4 sr on SEM. The pole piece to detector geometry is optimized for each specific microscope type in cooperation with the microscope manufacturer. This enables fast and routine element mapping at the nanometer scale without compromising the microscope performance, suitable electron probe quality and specimen preparation provided. In STEM atom column EDS (Fig. 3, [1]) as well as single atom identification [2] become possible.

[1] Direct atomic scale determination of magnetic ion partition in a room temperature multiferroic material L. Keeney et al., Scientific Reports 7, Article number: 1737 (2017), open access

[2] Individual heteroatom identification with X-ray spectroscopy R. M. Stroud et al., APL 108, 163101 (2016), open access

Who should attend?

  • Scientists and application scientists from industry and academia working in microscopy and the characterization of inorganic and organic materials
  • Interested in efficient fast high spatial resolution high-end EDS in TEM and STEM
  • Interested in standard EDS of electron transparent specimens

Element mapping of semiconductor structure at nm resolution. Data courtesy: Advanced Circuit Engineers
Fig. 1 Element mapping of semiconductor structure at nm resolution. Data courtesy: Advanced Circuit Engineers
EDS peak separation of semiconductor structure. Data courtesy: Advanced Circuit Engineers
Fig. 2 EDS peak separation of semiconductor structure. Data courtesy: Advanced Circuit Engineers
Atom column EDS of a multiferroic material using the Nion UltraSTEM200XE. Data courtesy L. Kenney et al. TCD Dublin
Fig. 3 Atom column EDS of a multiferroic material using the Nion Ultra STEM200XE. Data courtesy L. Kenney et al. TCD Dublin

Speakers

Dr. Meiken Falke
Dr. Meiken Falke
Global Product Manager TEM-EDS, Bruker Nano Analytics
Andi Kaeppel
Senior Product Manager EDS/SEM, Bruker Nano Analytics