Electron Microscope Analyzers

QUANTAX EDS for TEM

XFlash® 7T - Seeing Nano in Color: STEM EDS in TEM and SEM

Single Atoms and Nanostructures

Get the Best Possible Results for each Specific Microscope

Highlights

80
keV
Unprecedented upper energy limit
Unequivocally identify and quantify all present elements
3
TEM-quantification models
Succeed in TEM, STEM and T-SEM with easy-to-use powerful quantification based on theoretical and experimental Cliff-Lorimer factors, as well as Zeta-factor interpolation
1
Å
Stable resolution
Map periodic structures (atom, layers) with high stability and using enhanced drift correction features

Element Analysis in Transmission Electron Microscopy on the Nanometer Scale

Flexible and easy-to-use analysis software package ESPRIT with an open user interface: you see what you do.

Off-line analysis option with individual or LAN access for student or laboratory networks.

Sophisticated most seasoned quantitative energy dispersive X-ray spectroscopy (EDS) for complete data mining includes: 

  • Options for quantification steps: default suggestions for easy use, indvidual setup, detailed modification and saving/reloading of recipes
  • 3 different quantification approaches are covering all possible scenarios based on theoretical and experimental Cliff-Lorimer factors as well as Zeta-factors and the interpolation of missing Zeta-factors
  • TEM-specific high energy element lines above 40 keV available for quantification ensuring unambiguous results
  • Choice of 3 vital background models: a physical one for bulk and a physical one for thin lamellae as well as a mathematical model
  • Absorption correction included in the Cliff-Lorimer quantification already

Benefits

High-resolution Element Distribution Analysis of Electron Transparent Samples in TEM, STEM and SEM (T-SEM)

  • Long standing expertise in EDS ensures the configuration of the best solution for your specific microscope (STEM, TEM or SEM) thanks to slim-line detector design and geometrical optimization for each microscope pole piece and EDS flange type
  • Maximum collection and take-off angle allow fast and highly sensitive data acquisition
  • Fast-moving stable detector stage
  • A special drift correction routine for periodic features ensures successful EDS on the nanoscale
  • Time resolved data acquisition for in-situ experiments suitable for saving a stream of changing data, f.e. at elevated temperatures
  • Automation of data acquisition and analysis processes using the scripting and API options for generation of specific analysis jobs and batch processing
  • Clean data needing no or minimal post-acquisition corrections due to avoiding mechanical and electromagnetic interference completely and avoiding or keeping to a minimum specimen tilt, absorption, shadowing and system peaks
  • Most seasoned quantification for EDS data from electron transparent specimens on the market provides thorough data mining with unambiguous results
  • Highest quality assistance and training due to long standing experience in TEM for using your system to its full power

Applications

Ultimative Results with the New XFlash® 7 EDS Detectors for TEM 

© Image and sample courtesy of Michael Malaki, Shamail Ahmed; Material Science center, Faculty of physics, Philipps University Marburg

EDS Analyses of Coated Li-ion Battery Cathode Particle

The capacitance retention of NCM cathode material of batteries (SSB and LIB) can be improved by coating structures. To control the performance of these nanometer-thick coatings, their elemental distribution must be known. We present a SEM-based solution of EDS analysis achieving nanometer resolution on micrometer-sized cathode particles with irregular surfaces and compare it to TEM EDS.

Fields of Application of Elemental Analysis on TEM

Semiconductors
Deconvolution results at low X-ray energy of a spectrum obtained from a NiSi(Pt)

Quantification of the Pt Concentration in a NiSi(Pt)-NiSi2 Semiconductor Structure

This application example shows EDS data from the epitaxial growth of a Pt alloyed NiSi thin film and the quantification of a few at% of Pt alloyed in NiSi. NiSi is used for nm-sized metallization structures in semiconductor devices like MOSFETs.
Combined element maps of a layered system

Chemical Phase Analysis of a Layered Structure

It can be advantageous to check hyperspectral images for the existence of chemical phases without applying prior knowledge. Bruker’s ESPRIT AutoPhase automatically finds specimen regions of similar composition by analyzing a HyperMap based on Principle Component Analysis of the spectra. The sensitivity of this procedure can be adjusted. The approach is demonstrated using a multi-layer structure in cross-section as an example.
Mixed element map of nanowires

Chemical Characterization of Nanowires

Nanostructures, such as nanowires and nanorods and functionalized nanovehicles are of growing interest for various applications in nanotechnology, be that nano-electronics or drug delivery in the human body.
Single silicon atom in graphene

Identifiying a Single Atom on Graphene

Not only is it the highest art of EDS to obtain spectra of a single atom, but it can also provide valuable new information on the excitation properties of specific elements.
High angle annular darkfield image of an interconnect structure

Chemical Composition of Semiconductor Interconnects

Standard energy dispersive X-ray spectroscopy (EDS or EDX) using detector areas of 30mm2 on conventional scanning transmission electron microscopes (STEM) can deliver element mappings with nm resolution within a few minutes. The condition is, that the detector head is small enough (in slim-line design) to get as close to the specimen for (high solid angle) and as high above the specimen (for high take-off angle) as possible. The latter helps to avoid shadowing and absorption effects.
RAM microchip elemental distribution map

High Resolution Mapping of a Semiconductor RAM Microchip Using STEM-EDS in SEM (T-SEM)

Element distribution mapping of semiconductor nanostructures with X-ray based methods is not always straight forward. The need of nanoscale spatial resolution and X-ray peak overlaps are common challenges when investigating semiconductor materials. Sometimes it can be beneficial to use the SEM instead of expensive TEM tools and time for characterization.

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