Electron Microscope Analyzers

QUANTAX EDS for TEM

Energy Dispersive X-ray Spectrometer for STEM, TEM and T-SEM

Nanoscale Element Mapping

Quantitative Element Mapping

QUANTAX EDS for TEM

하이라이트

>15
years
Experience with silicon drift detectors in TEM
Detector materials and driving electronics are designed for fast, precise and reliable data acquisition and no interference with high-end TEM performance, even at atomic resolution.
80
keV
Unprecedented upper energy limit for element ID and quantification
With TEM-specific high energy electrons and thus higher energy element lines for quantitative EDS
1
atom
Single atom ID and atom column mapping
Single atom identification within seconds using the high solid angle XFlash 6T detectors in combination with high end high brightness cold FEG aberration corrected STEM

EDS Element Mapping in TEM, STEM and SEM (T-SEM) on the Nanometer Scale

The clear versatile measurement setup and slimline geometry ensure fast reliable TEM EDS data on a routine basis. Hyperspectral images are acquired using so-called HyperMaps or Spectrum Images. Spectra per pixel and all meta-data needed for correct quantitative analysis are saved for inspection and processing.

  • Slim-line design and geometrical optimization for each microscope pole piece type ensure maximum collection and take-off angle.
  • Helps avoid specimen tilt, absorption, shadowing and system peaks.
  • Windowless detectors for further increase of detection efficiency, particularly in the low energy region for K-lines of light elements and L-, M- and further lines of higher Z-elements.
  • Auto-retraction by default and customization ensure long detector life time and versatile experiments.
  • Automatic monitoring of in-situ and in-operando experiments, such as heating of materials, where chemical changes are recorded in real time.
  • Comprehensive software suite ESPRIT for data analysis on- and off-line. 

혜택

Software for On- and Off-line TEM EDS

QUANTAX EDS for TEM includes a flexible and transparent analysis software package ESPRIT. Default and adjustable methods allow fast and comprehensive data mining of element mappings, so-called HyperMaps or spectrum images and the generation of quantitative element maps. Standard based and standardless quantification routines for spectra, objects, line scans and element mapping are included as well as PCA based phase analysis and automated statistical partical analysis. 

  • Off-line analysis software with personal hardware-key and/or LAN option for student or laboratory networks.
  • Open transparent user interface: what you see is what you get.
  • Clear setup, modification and save/reload of quantification routines for EDS data.
  • Two quantification methods for electron transparent specimens: Cliff-Lorimer- and Zeta-Factor-Method. 
  • Theoretical Cliff-Lorimer Factors can be calculated for any voltage, including low voltages on SEM (TEM in SEM), using a large steadily updated atomic data base.
  • Easy software-guided calibration of experimental Cliff-Lorimer- and Zeta-Factors using standard specimens.
  • Zeta-factors for all elements can be calculated from only a few element standards using the existing Cliff-Lorimer-Factors.
  • Choice of background models: physical models for electron transparent and bulk specimens, as well as mathematical background calculation. 
  • Report generation with different templates.

응용

Fields of Application of Elemental Analysis on TEM

Semiconductors
Deconvolution results at low X-ray energy of a spectrum obtained from a NiSi(Pt)

Quantification of the Pt Concentration in a NiSi(Pt)-NiSi2 Semiconductor Structure

This application example shows EDS data from the epitaxial growth of a Pt alloyed NiSi thin film and the quantification of a few at% of Pt alloyed in NiSi. NiSi is used for nm-sized metallization structures in semiconductor devices like MOSFETs.
Combined element maps of a layered system

Chemical Phase Analysis of a Layered Structure

It can be advantageous to check hyperspectral images for the existence of chemical phases without applying prior knowledge. Bruker’s ESPRIT AutoPhase automatically finds specimen regions of similar composition by analyzing a HyperMap based on Principle Component Analysis of the spectra. The sensitivity of this procedure can be adjusted. The approach is demonstrated using a multi-layer structure in cross-section as an example.
Mixed element map of nanowires

Chemical Characterization of Nanowires

Nanostructures, such as nanowires and nanorods and functionalized nanovehicles are of growing interest for various applications in nanotechnology, be that nano-electronics or drug delivery in the human body.
Single silicon atom in graphene

Identifiying a Single Atom on Graphene

Not only is it the highest art of EDS to obtain spectra of a single atom, but it can also provide valuable new information on the excitation properties of specific elements.
High angle annular darkfield image of an interconnect structure

Chemical Composition of Semiconductor Interconnects

Standard energy dispersive X-ray spectroscopy (EDS or EDX) using detector areas of 30mm2 on conventional scanning transmission electron microscopes (STEM) can deliver element mappings with nm resolution within a few minutes. The condition is, that the detector head is small enough (in slim-line design) to get as close to the specimen for (high solid angle) and as high above the specimen (for high take-off angle) as possible. The latter helps to avoid shadowing and absorption effects.
RAM microchip elemental distribution map

High Resolution Mapping of a Semiconductor RAM Microchip Using STEM-EDS in SEM (T-SEM)

Element distribution mapping of semiconductor nanostructures with X-ray based methods is not always straight forward. The need of nanoscale spatial resolution and X-ray peak overlaps are common challenges when investigating semiconductor materials. Sometimes it can be beneficial to use the SEM instead of expensive TEM tools and time for characterization.