The next-gen QC5-R semiconductor metrology system provides automated high-resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) characterization for manually loaded wafers. This system enables rapid, precise measurements of epilayers with automatic technique switching between HRXRD and XRR, as well as automated parameter calculations and reporting with Bruker’s industry-leading RADS and REFS software. From streamlined measurements to comprehensive analyses, QC5-R is a high-precision instrument delivering reliable control over epilayer thickness and composition for process optimization.
QC5-R provides automated epilayer measurements for manually loaded wafers, delivering detailed information on properties, including composition, thickness, and uniformity.
QC5-R provides:
QC5-R’s reliable metrology data is automatically analyzed and reported using Bruker’s industry-leading data analysis software. Essential features are integrated, including batch fitting functionality for offline data analysis, automated wafer reports with pass/fail criteria, and automatic reporting.
By providing fast feedback on epilayer quality, QC5-R allows for rapid adjustments to the manufacturing process, maintaining high quality standards and improving overall yield.
The full width at half maximum (FWHM) of the symmetric GaN (002) rocking curve and the skew symmetric GaN (102) rocking curve are used together to measure the twist and tilt mosaic of the GaN channel.
For step-graded buffer structures, Omega-2Theta scans in triple axis mode are used to determine AlGaN buffer layer compositions, GaN cap thickness, and AlGaN barrier layer thickness. For superlattice structures, they are used to determine period and composition of repeated bilayers.
XRR precisely measures the thickness, density, and surface roughness of the AlGaN barrier and GaN cap layers, providing critical data for evaluating the film's quality. Bruker’s multi-stage REFS modeling method provides precise characterization of these layers.
Bruker’s composition scan addresses the challenge of buffer peaks masking the barrier layer peak by performing a direct line scan across the GaN layer in the L direction of reciprocal space. This method allows for accurate measurement of the AlGaN barrier layer with minimal buffer layer interference and can be easily integrated into a recipe.
Determining the composition and relaxation of barrier and buffer layers in semiconductor devices is complex but crucial for failure analysis and device reliability. Bruker’s asymmetric RSM solution addresses this with precise measurements, fast data collection via a high-intensity 1D detector, and automated analysis using PeakSplit software.
HRXRD measures the crystal quality, strain, relaxation, and thickness of the epilayers, while XRR determines the thickness, density, and surface roughness of the epitaxial layers.
Leveraging extensive experience in semiconductor fabs, Bruker has developed robust and intuitive software suite for automated analysis and reporting, including:
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