Ellipsometers and Reflectometers

FilmTek 2000 SE

Multimodal benchtop metrology for unpatterned thin to thick films

FilmTek 2000 SE

The FilmTek™ 2000 SE benchtop spectroscopic ellipsometer/reflectometer expands the versatility of our spectroscopic ellipsometer and reflectometer technology to enable fast, accurate, repeatable measurement of a wider range of unpatterned thin to thick films.


Combining our advanced rotating compensator ellipsometer design with DUV multi-angle polarized reflectometry, this multimodal metrology system can collect ellipsometric and multi-angle reflection data from the DUV to NIR on virtually all unpatterned translucent films (<1 Å to 150 µm thick) and achieves enhanced sensitivity and sample compatibility for refractive index measurements. Its multimodal design and DUV reflection measurement capabilities are particularly useful for characterizing ultra-thin layers, enabling it to provide fast, accurate, simultaneous measurement of their thickness, refractive index, and extinction coefficient with greater sensitivity and reproducibility than comparable ellipsometers and reflectometers.


FilmTek 2000 SE's extended sample range includes films and multilayers used in electro-optical materials, computer disks, and coated glass. When equipped with optional generalized ellipsometry technology, its sample compatibility also includes arbitrarily aligned, optically uniaxial samples or optically biaxial samples. This makes FilmTek 2000 SE an ideal multi-function solution in academic and R&D settings.


sensitivity and sample range
Enables more precise and repeatable measurement of refractive index.
DUV-NIR spectral range
Enables collection of reflection data from more challenging film materials and structures.
ellipsometry/reflectometry design
Delivers more data with greater accuracy and repeatability than either technique on its own, particularly for refractive index measurements.
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Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
  • Surface roughness
  • Constituent, void fraction
  • Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
  • Film gradient

System Components


  • Spectroscopic ellipsometry with rotating compensator design (300nm-1700nm)
  • Multi-angle, polarized spectroscopic reflection (240nm-1700nm)
  • Measures film thickness and index of refraction independently
  • Automated stage with autofocus
  • Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms


  • Generalized ellipsometry (4×4 matrix generalization method) for anisotropy measurements (nx, ny, nz)

Typical Application Areas

Virtually all translucent films ranging in thickness from less than 1 Å to approximately 150 µm can be measured with high precision. Typical application areas include:

  • Semiconductor and dielectric materials
  • Multilayer optical coatings
  • Optical antireflection coatings
  • Electro-optical materials
  • Computer disks
  • Coated glass
  • Thin metals
  • Solar cells

With flexible hardware and software that can be easily modified to satisfy unique customer requirements, particularly in academic and R&D environments.

Technical Specifications

Film Thickness Range 0 Å to 150 µm
Film Thickness Accuracy ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm
Spectral Range 240 nm - 1700 nm (240 nm - 1000 nm is standard)
Measurement Spot Size 3 mm
Sample Size 2 mm - 300 mm (150 mm standard)
Spectral Resolution 0.3 nm - 2nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Automated Stage with Auto Focus 300 mm (200 mm is standard)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time ~2 sec per site (e.g., oxide film)

Performance Specifications

Film(s) Thickness Measured Parameters Precision ()
Oxide / Si 0 - 1000 Å t 0.03 Å
1000 - 500,000 Å t 0.005%
1000 Å t , n 0.2 Å / 0.0001
15,000 Å t , n 0.5 Å / 0.0001
150.000 Å t , n 1.5 Å / 0.00001
Nitride / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0005
Photoresist / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0002
Polysilicon / Oxide / Si 200 - 10,000 Å Poly , t Oxide 0.2 Å / 0.1 Å
500 - 10,000 Å Poly , t Oxide 0.2 Å / 0.0005

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