Applications EDS for TEM, STEM and T-SEM

Semiconductors

Semiconductors

Si-based

Quantification of Pt in a NiSi(Pt)-NiSi2 Semiconductor Structure

Lanthanum hexaboride (LaB6) is a very illustrative example for quantitative EDS analysis in S/TEM, since it contains two extremes, a very light element (B) and a heavy element (La).
LED

Chemical Phase Analysis of a Layered Structure

It can be advantageous to check hyperspectral images for the existence of chemical phases without applying prior knowledge. Bruker’s ESPRIT AutoPhase automatically finds specimen regions of similar composition by analyzing a HyperMap based on Principle Component Analysis of the spectra. The sensitivity of this procedure can be adjusted. The approach is demonstrated using a multi-layer structure in cross-section as an example.
III-V / LED

Chemical Characterization of Nanowires

Nanostructures, such as nanowires and nanorods and functionalized nanovehicles are of growing interest for various applications in nanotechnology, be that nano-electronics or drug delivery in the human body.
III-V

Atom Column EDS Analysis

Properties of a semiconductor are determined by its structure on the atomic level, for example by point defects. Using EDS mapping at the highest possible resolution it is possible to locate and characterize such defects.
Graphene

Identifiying a Single Atom on Graphene

Not only is it the highest art of EDS to obtain spectra of a single atom, but it can also provide valuable new information on the excitation properties of specific elements.
Si-based

Chemical Composition of Semiconductor Interconnects

Standard energy dispersive X-ray spectroscopy (EDS or EDX) using detector areas of 30mm² on conventional scanning transmission electron microscopes (STEM) can deliver element mappings with nm resolution within a few minutes. The condition is, that the detector head is small enough (in slim-line design) to get as close to the specimen for (high solid angle) and as high above the specimen (for high take-off angle) as possible. The latter helps to avoid shadowing and absorption effects.
Si-based

High Resolution Mapping of a Semiconductor Structure Using STEM-EDS in SEM (T-SEM)

Element distribution mapping of semiconductor nanostructures with X-ray based methods is not always straight forward. The need of nanoscale spatial resolution and X-ray peak overlaps are common challenges when investigating semiconductor materials. Sometimes it can be beneficial to use the SEM instead of expensive TEM tools and time for characterization.

Bio/Soft Mat.

In situ