FilmTek 2000M TSV Robotic
FilmTek 2000M TSV
FilmTek™ 2000M TSV 是一款采用非破坏性光学技术的全自动化量测工具，专门设计用于精确测量薄膜厚度、TSV深度、沟槽深度、关键尺寸、残留硅（residual silicon）以及总厚度变化（total thickness variation，TTV）等参数，完美适配于前道工艺与先进封装领域的发展需求。凭借其独特的数据处理算法和先进的专利硬件，该系统实现了小光斑扫描和近乎准直光束，确保了测量结果的高精度和可靠性。无论是半导体生产还是研发，FilmTek 2000M TSV都是您不可或缺的伙伴。
能够对蚀刻出的高深宽比的硅通孔（TSV）结构进行高性能测量，甚至是开口小于 1 µm 蚀刻深度高达 500 µm 的通孔结构。
Film Thickness Measurements
Unlike typical reflectometry tools, FilmTek 2000 TSV uses collimated light. A collimated beam makes it possible to maintain coherent reflectance for thin to very thick films, producing accurate thickness measurements from films 5 nm to 150 µm thick in the standard configuration.
Combined with a high-resolution spectrometer, 2000M TSV can fit and model high-frequency oscillations common in thick film reflectance data, extending the compatible film thickness to 350 µm.
High Aspect Ratio TSV Characterization
Typical reflectometry tools also cannot reliably measure the depth of through-silicon via (TSV) structures due to incoherence. The collimated beam and small spot size of FilmTek 2000M TSV make it able to reach the bottom of high aspect ratio structures like TSV, accurately measuring diameters down to 2 µm and aspect ratios of 40:1.
Patented TSV data processes allow for a simple reflectance measurement to give detailed real-time results for TSV depth and CD analysis. The integrated CCD camera is used to measure top CD and for other imaging purposes.
Next-Gen Semiconductor Process Control
As the semiconductor industry moves towards increasingly smaller devices, metrology tools must keep pace. 2000M TSV’s patented optical design has a variable spot size that can go as small as 2x1 µm, capable of measuring the smallest test pads in extremely tight spaces.
From front-end manufacturing to advanced packaging and hard drive applications, FilmTek 2000M TSV can measure thin and thick layers on top of and around devices to provide process control and reduce scrap.
测量能力
能够测量的指标如下：
TSV评估适用于直径大于1 μm，最大深度在500 μm内的通孔结构
高度或深度（Height or depth）
关键尺寸（Critical dimensions）
膜厚度（Film thickness）
Typical Application Areas
Semiconductor Manufacturing
Perform fast, accurate, and repeatable multi-layer film thickness and refractive index measurements on patterned device wafers for semiconductor manufacturing.
FilmTek systems enable process control of oxides, nitrides, ONO, Oxide / Nitride / Cu, polysilicon / oxide, AlN, TaN, TiN, SiGex and composition control, resist, Si3N4/GaAs, ARC, gate oxide, and GaAs films, CMP on Cu, and many other materials encountered throughout the entire wafer fabrication process.
Advanced Packaging
Measure the complete range of back-end manufacturing and process control packaging parameters.
FilmTek process control solutions enable fully automated measurements for thick resist thickness for bump coplanarity, high-aspect-ratio TSV depth and top CD for interconnects, bonded silicon thickness or Total Thickness Variation (TTV), and thin metal-oxide thickness in bonding processes to prevent non-wet open failures.
Typical application areas include:
- TSV metrology
- Advanced semiconductor packaging
MEMS
Perform fully-automated film thickness and refractive index measurements of oxide, nitride, oxide/nitride, ONO, amorphous carbon, resist, and oxide/polysilicon/oxide films on patterned device wafers.
Fully-automated FilmTek ellipsometry and reflectometry tools feature cassette-to-cassette wafer handling, 50µm spot size, pattern recognition, and SECS/GEM with a best-in-class combination of performance and price.
典型应用
先进封装中的应用
精准掌握后道制造与封装工艺控制的每个细节
FilmTek系统提供全自动化的测量能力，包括测量实现凸点共面性（bump coplanarity）所需的厚光阻层厚度、高深宽比TSV的深度及顶部关键尺寸(CD)、键合硅片厚度或总厚度变化(TTV)，以及在键合工艺中为避免非润湿开路故障而进行的薄金属氧化物层厚度测量。我们的技术确保每一步生产过程都达到高标准，帮助您提高良率，降低成本。
Typical application areas include:
- TSV metrology
- Advanced semiconductor packaging
TSV Depth Variation
Getting an overall view of thickness or TSV depth variations across an entire wafer can be vital to effective process control. Here, a 26-point patch plot shows TSV depth variation across a 300 mm wafer.
Depth Measurement Accuracy for TSVs
Via etch depth measurements were measured with the 2000M TSV and compared against destructive SEM cross-sectional measurements. Results showed close agreement between the two measurements for via diameters 5–20 µm.
FilmTek 2000M TSV Select Specifications
Each wafer manufacturing facility and semiconductor fab has its own specific requirements and challenges. Our listed product specifications and offerings are always a starting point for a conversation with our experts to determine how our capabilities can meet your needs.
| Measurement Function | TSV etch depth, bump height, critical dimension, and film thickness |
| Substrate Size | 200 or 300 mm |
| CD Precision (1σ) | <0.2% |
| Etch Depth Precision (1σ) | <0.005% |
| Film Thickness Range | 5 nm to 350 µm (5 nm to 150 µm is standard) |
| Film Thickness Precision (1σ) |
<0.005% |
How Can We Help?
Bruker partners with our customers to solve real-world application issues. We develop next-generation technologies and help customers select the right system and accessories. This partnership continues through training and extended service, long after the tools are sold.
Our highly trained team of support engineers, application scientists and subject-matter experts are wholly dedicated to maximizing your productivity with system service and upgrades, as well as application support and training.