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EDS of semiconductor lamellae in SEM (T-SEM) and STEM

Quantitative element mapping and more

The continuous miniaturization of semiconductor structures requires their understanding on the nanoscale to ensure suitable design and failure analysis. Many investigations need expensive measurement times on high-end transmission electron microscopes as well as complex specimen preparation and specimen transfer routines.

We show options to evaluate the element distribution in electron transparent samples, e.g. FIB lamellae, using energy dispersive X-ray spectroscopy not only in TEM, but also in SEM (Fig.1) or during FIB. Single, multiple, and annular Bruker XFlash® detectors are available for fast data acquisition. Efficient approaches for quantitative EDS of electron transparent specimens in SEM (so-called T-SEM) and in STEM are presented.

Furthermore, EDS is correlated with other analysis techniques, such as non-destructive micro X-ray fluorescence analysis (micro-XRF) using the Bruker M4 TORNADO and Transmission Kikuchi Diffraction (TKD) using electron transparent specimens in SEM.



Element distribution (net counts after element line deconvolution) in a semiconductor thin section overlaid onto the secondary electron image. The specimen was investigated in SEM after FIB using the high collection angle annular Bruker XFlash FlatQUAD EDS detector and 3 min acquisition time. For clarity, not all elements are shown.

Who Should Attend?

  • Scientists and application scientist from semiconductor fabs and labs
  • Academic staff and students interested in FIB, specimen preparation, SEM- and TEM-EDS, and related analysis techniques for element and structure analysis


Dr. Meiken Falke

Global Product Manager TEM-EDS, Bruker Nano Analytics

Max Patzschke

Application Scientist, Bruker Nano Analytics

Purvesh Soni

Application Scientist, Bruker Nano Analytics