Ellipsometers and Reflectometers

FilmTek 3000 SE

Multimodal benchtop sysem ideal for measuring very thin absorbing films

FilmTek 3000 SE

The FilmTek™ 3000 SE high-performance benchtop ellipsometer/reflection-transmission spectrophotometer provides a versatile single-instrument solution for investigating very thin absorbing films on transparent substrates.  


This system combines our rotating compensator-based spectroscopic ellipsometer design with high-performance DUV multi-angle reflectometry and transmission measurement capabilities. It is consequently able to simultaneously and independently measure the thickness, refractive index, and extinction coefficient of very thin absorbing film samples on transparent substrates, as well as virtually any other transparent film sample <1 Å to 150 µm thick, with very high accuracy and repeatability.


The FilmTek 3000 SE's fully integrated configuration includes complete automation and advanced material modeling capabilities, allowing users to collect reflection, transmission, and ellipsometric data with exceptional ease and efficiency. Moreover, this system can be optionally configured to collect polarimetry data, making it more broadly applicable to use-cases requiring birefringence measurement (e.g., optical coating analysis). Its multimodal, easy-to-use, extendable design makes FilmTek 3000 SE ideal for academic- and R&D-level applications.

ellipsometric, reflection, and transmission measurement
Allows characterization of very thin absorbing films on transparent substrates with greater accuracy and efficiency than conventional monomodal methods.
multimodal design
Delivers additional data and customizable features to meet even challenging and complex measurement requirements.
FilmTek technology
Provides intentional and intelligently-designed solutions to the unique challenges of measuring absorbing samples.
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Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
  • Surface roughness
  • Constituent, void fraction
  • Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
  • Film gradient

System Components


  • Spectroscopic ellipsometry with rotating compensator design (300 nm - 1700 nm)
  • Spectroscopic reflection (190 nm - 1700 nm) of polarized light at multiple angles
  • Transmission measurement
  • Measures film thickness and index of refraction independently
  • Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
  • Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms


  • Generalized ellipsometry (4×4 matrix generalization method) for anisotropy measurements (nx, ny, nz)
  • Polarimetry measurements for the accurate and simultaneous determination of optical constants and birefringence

Typical Application Areas

Virtually all translucent films ranging in thickness from less than 1 Å to approximately 150 µm can be measured with high precision. Typical application areas include:

  • Semiconductor and dielectric materials
  • Multilayer optical coatings
  • Optical antireflection coatings
  • Electro-optical materials
  • Computer disks
  • Coated glass
  • Thin metals
  • Solar cells

With flexible hardware and software that can be easily modified to satisfy unique customer requirements, particularly in academic and R&D environments.

Technical Specifications

Film Thickness Range 0 Å to 150 µm
Film Thickness Accuracy ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm
Spectral Range 240 nm - 1700 nm (240 nm - 1000 nm is standard)
Measurement Spot Size 3 mm
Sample Size 2 mm - 300 mm (150 mm standard)
Spectral Resolution 0.3 nm - 2nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Automated Stage with Auto Focus 300 mm (200 mm is standard)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time ~2 sec per site (e.g., oxide film)

Performance Specifications

Film(s) Thickness Measured Parameters Precision ()
Oxide / Si 0 - 1000 Å t 0.03 Å
1000 - 500,000 Å t 0.005%
1000 Å t , n 0.2 Å / 0.0001
15,000 Å t , n 0.5 Å / 0.0001
150.000 Å t , n 1.5 Å / 0.00001
Nitride / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0005
Photoresist / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0002
Polysilicon / Oxide / Si 200 - 10,000 Å Poly , t Oxide 0.2 Å / 0.1 Å
500 - 10,000 Å Poly , t Oxide 0.2 Å / 0.0005

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