FilmTek 2000 PAR-SE
FilmTek 2000 PAR-SE
Combining patented Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technology, the FilmTek™ 2000 PAR-SE utilizes multi-angle and multi-modal data collection to independently measure film thickness and index of refraction. By independently measuring index and thickness, the FilmTek 2000 PAR-SE is far more sensitive to changes in films, particularly films within multi-layer stacks, than existing metrology tools that rely on conventional ellipsometry or reflectometry techniques. The FilmTek 2000 PAR-SE is a fully-integrated package, paired with advanced material modeling software to make even the most rigorous measurement of patterned wafers reliable and intuitive.
Measurement Capabilities
Enables simultaneous determination of:
- Multiple layer thicknesses
- Indices of refraction [ n(λ) ]
- Extinction (absorption) coefficients [ k(λ) ]
- Energy band gap [ Eg ]
- Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
- Surface roughness
- Constituent, void fraction
- Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
- Film gradient
System Components
Standard:
- Spectroscopic ellipsometry with rotating compensator design (295 nm - 1700 nm)
- Multi-angle, polarized spectroscopic reflection (190 nm - 1700 nm)
- Measures film thickness and index of refraction independently
- Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
- Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
- Camera for imaging measurement location
- Pattern recognition
- 50 micron spot size
- Advanced material modeling software
- Bruker's generalized material model with advanced global optimization algorithms
Optional:
- Generalized ellipsometry (4×4 matrix generalization method) for anisotropy measurements (nx, ny, nz)
- Cassette to cassette wafer handling
- FOUP and SMIF compatible
- Pattern recognition (Cognex)
- SECS/GEM
Typical Application Areas
Virtually all translucent films ranging in thickness from less than 1 Å to approximately 150 µm can be measured with high precision. Typical application areas include:
Multi-layer Thin Films
Collect accurate, precise production measurements of thin films and multi-layers on patterned device wafers for front and back-end manufacturing.
Filmtek advanced multi-angle and multi-modal technology enables in-line composition control (e.g., %Ge in SiGex) for thin films, Oxide / Nitride / Cu, CMP process monitoring, and measurement of thin metal oxide thickness (SnO, CuO, InO) with sub-Angstrom repeatability to prevent non-wet open failures in bonding processes.
MEMS
Perform fully-automated film thickness and refractive index measurements of oxide, nitride, oxide/nitride, ONO, amorphous carbon, resist, and oxide/polysilicon/oxide films on patterned device wafers.
Fully-automated FilmTek ellipsometry and reflectometry tools feature cassette-to-cassette wafer handling, 50µm spot size, pattern recognition, and SECS/GEM with a best-in-class combination of performance and price.
New Materials
Characterize new materials with a wide range of rapid, accurate, and reliable R&D measurement capabilities.
FilmTek benchtop tools with automated wafer mapping enable measurements of multiple layer thicknesses, indices of refraction [n(λ)], extinction (absorption) coefficients [k(λ)], energy band gap [Eg], composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.), surface roughness, constituent / void fraction, crystallinity / amorphization (e.g., degree of crystallinity of Poly-Si or GeSbTe films), and film gradient.
Unknown/Complex Materials
Independently and unambiguously determine thickness (t), refractive index (n), and extinction coefficient (k) for unknown materials.
FilmTek combined multiple-angle reflectometry and rotating compensator design ellipsometry systems deliver unprecedented performance with high-throughput automated mapping of patterned and un-patterned samples, 0.03 Angström repeatability for thin films, an extended thickness range from bare substrate to 50µm, and sub-Angström accuracy for complex, multi-layer thin film structures.
Technical Specifications
| Film Thickness Range | 0 Å to 150 µm |
|---|---|
| Film Thickness Accuracy | ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm |
| Spectral Range | 190 nm - 1700 nm (220 nm - 1000 nm is standard) |
| Measurement Spot Size | 25 µm - 300 µm (normal incidence); 2 mm (70°) |
| Sample Size | 2 mm - 300 mm (150 mm standard) |
| Spectral Resolution | 0.3 nm - 2nm |
| Light Source | Regulated deuterium-halogen lamp (2,000 hrs lifetime) |
| Detector Type | 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR) |
| Automated Stage with Auto Focus | 300 mm (200 mm is standard) |
| Computer | Multi-core processor with Windows™ 10 Operating System |
| Measurement Time | <1 sec per site (e.g., oxide film) |
Performance Specifications
| Film(s) | Thickness | Measured Parameters | Precision (1σ) |
|---|---|---|---|
| Oxide / Si | 0 - 1000 Å | t | 0.03 Å |
| 1000 - 500,000 Å | t | 0.005% | |
| 1000 Å | t , n | 0.2 Å / 0.0001 | |
| 15,000 Å | t , n | 0.5 Å / 0.0001 | |
| 150.000 Å | t , n | 1.5 Å / 0.00001 | |
| Nitride / Si | 200 - 10,000 Å | t | 0.02% |
| 500 - 10,000 Å | t , n | 0.05% / 0.0005 | |
| Photoresist / Si | 200 - 10,000 Å | t | 0.02% |
| 500 - 10,000 Å | t , n | 0.05% / 0.0002 | |
| Polysilicon / Oxide / Si | 200 - 10,000 Å | t Poly , t Oxide | 0.2 Å / 0.1 Å |
| 500 - 10,000 Å | t Poly , t Oxide | 0.2 Å / 0.0005 |