AFM 模式

导电原子力显微镜（C-AFM）

高分辨率电流和形貌成像

研究人员可对一系列研究和过程的导电率变化进行成像，这些研究和过程包括电缺陷表征以及对导电聚合物、半导体、纳米管甚至某些有机材料的探测。

导电原子力显微镜（C-AFM）以及相关模式隧穿原子力显微镜（TUNA）和PeakForce TUNA™是强大的电流感应技术，代表了布鲁克纳米电学表征模式系列的一部分。

C-AFM是源自“接触模式”的二次成像模式，可表征中等到低导电率和半导体材料的导电率变化。可用于对 2pA至1µA范围内的电流进行测量和成像，同时采集形貌信息。

借助MultiMode 8的PeakForce隧穿原子力显微镜（PeakForce TUNA）模块中的导电原子力显微镜（C-AFM）分析，我们能够了解掺杂半导体特定位置的纳米尺度导电率。由此我们已经在纳米尺度下对许多新材料及其电学性能进行了探索。在过去的三年中，我们一直在使用MultiMode 8。我必须指出，这款仪器确实功能强大。

印度甘地讷格尔印度理工学院（EIT）Emila Panda博士

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