Ellipsometers and Reflectometers

FilmTek CD

Multimodal critical dimension measurement and advanced film metrology

FilmTek CD

The FilmTekTM CD optical critical dimension system is our leading-edge solution for fully-automated, high-throughput CD measurement and advanced film analysis for the 1x nm design node and beyond. This system delivers real-time multi-layer stack characterization and CD measurement simultaneously, for both known and completely unknown structures.

FilmTek CD utilizes patented multimodal measurement technology to meet the challenging demands associated with the most complex semiconductor design features in development and production. This technology enables measurement of extremely small line widths, with high accuracy measurements in the sub-10 nm range.


Existing metrology tools that rely on conventional ellipsometry or reflectometry techniques are limited in their ability to accurately resolve CD measurements in real-time, requiring tedious library generation during device research and development. FilmTek CD  overcomes this limitation by a patented multi-modal measurement technology that provides an accurate single solution even for completely unknown structures.


FilmTek CD includes proprietary diffraction software with fast, real-time optimization. Real-time optimization allows the user to easily measure unknown structures with minimal setup time and recipe development while avoiding the delays and complications associated with library generation.

1x nm design node
measurement capability
Delivers fast, scalable CD metrology and advanced film analysis.
Sub-10 nm
high-performance measurements
Enables accurate characterization of complex semiconductor features with extremely small line widths.
optimized CD measurement
Overcomes the limitations of conventional systems to provide reliable measurements with minimal operator intervention.
Learn more about this instrument.
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Measurement Capabilities

  • Thickness, refractive index, and optical CD metrology
  • Optical constant characterization of unknown films
  • Thickness of ultra-thin film stacks
  • Broad range of critical dimension measurement applications including metal gate recess, high k recess, side wall angle, resist height, hard mask height, trench and contact profiles, and pitch walking

System Components


  • Multimodal measurement technology for real-time multi-layer stack characterization and CD measurement at 1x nm design node and beyond

    • Multi-angle scatterometry with proprietary Rigorous Coupled Wave Analysis (RCWA)
    • Normal incidence spectroscopic ellipsometry
    • Spectroscopic generalized ellipsometry (4×4 matrix generalization method) with rotating compensator design
    • Multi-angle, DUV-NIR polarized spectroscopic reflection (Rs, Rp, Rsp, and Rps)
  • Full CD parameter measurement including period, linewidth, trench depth, and sidewall angle
  • Measures film thickness and index of refraction independently
  • Patented parabolic mirror technology – small spot size measures within a 50×50 µm feature
  • Fast, real-time optimization allows for a wide range of applications with minimal setup time (no library generation necessary)
  • Pattern recognition (Cognex)
  • Cassette to cassette wafer handling
  • FOUP or SMIF compatible


  • To suit a wide range of budgets and end-use applications, this system is also available as a manual load, bench-top unit for R&D

Typical Application Areas

Typical applications include:

  • Semiconductor R&D and production

Technical Specifications

Film Thickness Range 0 Å to 150 µm
Film Thickness Accuracy ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm
Spectral Range 190 nm - 1000 nm (220 nm - 1000 nm is standard)
Measurement Spot Size 50 µm
Spectral Resolution 0.3 nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time ~2 sec (e.g., oxide film)

Performance Specifications

Film(s) Thickness Measured Parameters Precision ()
Oxide / Si 0 - 1000 Å t 0.03 Å
1000 - 500,000 Å t 0.005%
1000 Å t , n 0.2 Å / 0.0001
15,000 Å t , n 0.5 Å / 0.0001
150.000 Å t , n 1.5 Å / 0.00001
Nitride / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0005
Photoresist / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0002
Polysilicon / Oxide / Si 200 - 10,000 Å Poly , t Oxide 0.2 Å / 0.1 Å
500 - 10,000 Å Poly , t Oxide 0.2 Å / 0.0005

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