The FilmTekTM CD optical critical dimension system is our leading-edge solution for fully-automated, high-throughput CD measurement and advanced film analysis for the 1x nm design node and beyond. This system delivers real-time multi-layer stack characterization and CD measurement simultaneously, for both known and completely unknown structures.
FilmTek CD utilizes patented multimodal measurement technology to meet the challenging demands associated with the most complex semiconductor design features in development and production. This technology enables measurement of extremely small line widths, with high accuracy measurements in the sub-10 nm range.
Existing metrology tools that rely on conventional ellipsometry or reflectometry techniques are limited in their ability to accurately resolve CD measurements in real-time, requiring tedious library generation during device research and development. FilmTek CD overcomes this limitation by a patented multi-modal measurement technology that provides an accurate single solution even for completely unknown structures.
FilmTek CD includes proprietary diffraction software with fast, real-time optimization. Real-time optimization allows the user to easily measure unknown structures with minimal setup time and recipe development while avoiding the delays and complications associated with library generation.
Typical applications include:
|Film Thickness Range||0 Å to 150 µm|
|Film Thickness Accuracy||±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm|
|Spectral Range||190 nm - 1000 nm (220 nm - 1000 nm is standard)|
|Measurement Spot Size||50 µm|
|Spectral Resolution||0.3 nm|
|Light Source||Regulated deuterium-halogen lamp (2,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||~2 sec (e.g., oxide film)|
|Film(s)||Thickness||Measured Parameters||Precision (1σ)|
|Oxide / Si||0 - 1000 Å||t||0.03 Å|
|1000 - 500,000 Å||t||0.005%|
|1000 Å||t , n||0.2 Å / 0.0001|
|15,000 Å||t , n||0.5 Å / 0.0001|
|150.000 Å||t , n||1.5 Å / 0.00001|
|Nitride / Si||200 - 10,000 Å||t||0.02%|
|500 - 10,000 Å||t , n||0.05% / 0.0005|
|Photoresist / Si||200 - 10,000 Å||t||0.02%|
|500 - 10,000 Å||t , n||0.05% / 0.0002|
|Polysilicon / Oxide / Si||200 - 10,000 Å||t Poly , t Oxide||0.2 Å / 0.1 Å|
|500 - 10,000 Å||t Poly , t Oxide||0.2 Å / 0.0005|