Ellipsometers and Reflectometers

FilmTek 3000 PAR-SE

Advanced multimodal metrology for patterned films on transparent or non-transparent substrates

FilmTek 3000 PAR-SE

The FilmTek™ 3000 PAR-SE is one of our most advanced and versatile metrology solutions, able to meet extremely challenging measurement demands in both R&D and production environments. Though it achieves idustry-leading accuracy and precision in nearly any advanced thin film measurement application, this system excels at material characterization of product wafers and patterned films on both transparent and non-transparent substrates.


Like our other PAR-SE products, this system combines rotating compenstor-based spectroscopic ellipsometry, DUV multi-angle polarized reflectometry, our patented parabolic mirror micro-spot optical design, our proprietary Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technology, and our advanced material modeling software and optimization algorithms. It is also uniquely capable of spectroscopic transmission measurements across an extended spectral range. As a result, FilmTek 3000 PAR-SE not only achieves industry-leading sensitivity to changes in ultra-thin films and multilayers, but is also uniquely well suited for use with absorbing patterned films or product wafers containing absorbing structures. 


Additionally, the FilmTek 3000 PAR-SE's hardware and software can both be easily modified to satisfy unique customer needs and measurement requirements far outside those of mainstream film metrology applications, including those requiring generalized ellipsometry or more advanced automation.

sample compatibility
Enables reflection, transmission, and ellipsometric measurement of materials on both transparent and non-transparent substrates.
FilmTek PAR-SE design
Provides industry-leading accuracy and precision in applications far beyond the abilities of competing systems.
measurement capability
Delivers enhanced accuracy and repeatability for patterned and absorbing films and product wafers.
Learn more about this instrument.
Contact Us

Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]


  • Composition (e.g., %Ge in SiGex; % Ga in GaxIn1-xAs; %Al in AlxGa1-xAs etc.)
  • Surface roughness
  • Constituent, void fraction
  • Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
  • Film gradient

System Components


  • Spectroscopic reflection measurement
  • Spectroscopic transmission measurement
  • Spectroscopic ellipsometry with rotating compensator design (295nm-1700nm)
  • Multi-angle, polarized spectroscopic reflection (190nm-1700nm)
  • Spectroscopic transmission measurement (220nm-1000nm)
  • Measures film thickness and index of refraction independently
  • Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
  • Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
  • Camera for imaging measurement location
  • Pattern recognition
  • 50 micron spot size
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms


  • Automated sample handling
  • Generalized ellipsometry (4×4 matrix generalization method) for anisotropy measurements (nx, ny, nz)

Typical Application Areas

Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:

  • Photonics and telecom
  • Flat panel display

With flexible software that can be easily modified to satisfy unique customer requirements in  R&D and production environments.

Technical Specifications

Film Thickness Range 0 Å to 150 µm
Film Thickness Accuracy ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm
Spectral Range 190 nm - 1700 nm (220 nm - 1000 nm is standard)
Measurement Spot Size 25 µm - 300 µm (50 µm standard); 2 mm (70°)
Spectral Resolution 0.3 - 2 nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time ~2 sec per site (e.g., oxide film)


Film(s) Thickness Measured Parameters Precision (1σ)
Oxide / Si 0 - 1,000 Å t 0.03 Å
1,000 - 500,000 Å t 0.005%
1,000 Å t , n 0.2 Å / 0.0001
15,000 Å t , n 0.5 Å / 0.0001
150,000 Å t , n 1.5 Å / 0.00001
Photoresist / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0002
Nitride / Si 200 - 10,000 Å t 0.02%
500 - 10,000 Å t , n 0.05% / 0.0005
Polysilicon / Oxide / Si 200 - 10,000 Å t(POLY) , t(OXIDE) 0.2 Å / 0.1 Å
500 - 10,000 Å t(POLY) , t(OXIDE) 0.2 Å / 0.0005

Contact Us

Input value is invalid.

* Please fill out the mandatory fields.

Please enter your first name
Please enter your last name
Please enter your e-mail address
Please enter a valid phone number
Please enter your Company/Institution
What best describes your current interest?
Please add me to your email subscription list so I can receive webinar invitations, product announcements and events near me.
Please accept the Terms and Conditions