The FilmTek™ 3000 PAR augments our unique combined reflection-transmission spectrophotometer design to allow the characterization of patterned films deposited on transparent substrates, particularly very thin absorbing films like those used in optical antireflection coatings, laser mirrors, and thin metals, among many others.
In addition to full integration with our suite of advanced and proprietary material modeling software and optimization algorithms, this system utilizes our patented parabolic mirror technology to achieve a small spot size (down to 50 µm) and enhance its compatibility with patterned film samples. As a result, FilmTek 3000 PAR provides the same level of performance and data quality for patterned thin film characterization as the FilmTek 3000 provides for unpatterned film samples, making it easy for users to collect precise, simultaneous reflection and transmission measurements on challenging patterned film samples, even those that are highly absorbing in the DUV.
Enables simultaneous determination of:
Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:
With flexible software that can be easily modified to satisfy unique customer requirements in R&D and production environments.
|Film Thickness Range||3 nm to 150 µm|
|Film Thickness Accuracy||±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm|
|Spectral Range||220 nm - 1700 nm (220 nm - 1000 nm is standard)|
|Measurement Spot Size||25 µm - 300 µm (50 µm standard)|
|Sample Size||50 mm - 300 mm (150 mm is standard)|
|Spectral Resolution||0.3 - 2 nm|
|Light Source||Regulated deuterium-halogen lamp (2,000 hrs lifetime)|
|Detector Type||2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)|
|Computer||Multi-core processor with Windows™ 10 Operating System|
|Measurement Time||<1 sec per site (e.g., oxide film)|
|Film(s)||Thickness||Measured Parameters||Precision (1σ)|
|Oxide / Si||200 - 500 Å||t||0.5 Å|
|500 - 10,000 Å||t||0.25 Å|
|1000 Å||t , n||0.25 Å / 0.001|
|Nitride / Si||200 - 10,000 Å||t||0.5 Å|
|Photoresist / Si||200 - 10,000 Å||t||0.5 Å|
|a-Si / Oxide / Si||200 - 10,000 Å||t||0.5 Å|