Ellipsometers and Reflectometers

FilmTek 2000 PAR

Micro-spot DUV-NIR spectroscopic reflectometry for patterned wafers

FilmTek 2000 PAR

The FilmTek™ 2000 PAR benchtop spectroscopic reflectometer is an economical solution for high-throughput, fully automated mapping of patterned wafers in R&D and production environments. It is specifically designed to address a broad range of wafer-based technology applications in silicon semiconductor, LED/OLED, and data storage.

 

Expanding upon FilmTek 2000's proprietary DUV-NIR spectroscopic reflectometry technology, FilmTek 2000 PAR features integrated automated wafer handling, pattern recognition, and patented parabolic mirror-based micro-spot measurement capabilities (50 µm standard, down to 13 µm). This system delivers best-in-class measurement of patterned wafers that is more efficient, intuitive, and sensitive to local non-uniformity than comparable reflectometers, even on challenging samples.

 

The FilmTek 2000 PAR's fully integrated, advanced material modeling software supports both built-in standard and user-defined wafer map patterns, providing rapid generation of 2D and 3D data maps of any measured parameter. Optional Cognex pattern recognition, cassette-to-cassette wafer handling, and SECS/GEM compatibility can be added to further optimize the system's measurement capabilities and performance to your specific application.

Wafer-mapping
hardware configuration
Provides targeted, best-in-class solution for patterned wafer characterization in R&D and production.
Micro-spot
parabolic-mirror-based measurements
Deliver coherent reflection data that is highly sensitive to local non-uniformity in samples.
High-throughput
fully automated operation
Enables faster, more efficient wafer mapping.
Learn more about this instrument.
Contact Us
Features

Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
  • Surface roughness
  • Constituent, void fraction
  • Crystallinity/Amorphization (e.g., of Poly-Si, GeSbTe films)
  • Film gradient

System Components

Standard:

  • DUV-NIR fiber-optic spectrophotometer
  • Spectroscopic reflection measurement
  • Patented parabolic mirror technology
  • Automated stage with autofocus
  • Automated wafer handling
  • Camera for imaging measurement location
  • Pattern recognition
  • 50 micron spot size (standard)
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms

Optional:

  • Small spot size (13 µm)
  • Pattern recognition (Cognex)
  • Cassette to cassette wafer handling
  • SECS/GEM compatibility
Applications

Typical Application Areas

Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:

  • Semiconductor and dielectrics
  • Data storage
  • LED/OLED

With flexible hardware and software that can be easily modified to satisfy unique customer requirements in R&D and production environments.

Technical Specifications

Film Thickness Range 3 nm to 150 µm
Film Thickness Accuracy ±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm
Spectral Range 190 nm - 1700 nm (240 nm - 1000 nm is standard)
Measurement Spot Size 13 µm - 300 µm (50 µm is standard)
Wafer Size 50 mm - 300 mm (150 mm standard)
Spectral Resolution 0.3 - 2 nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time <1 sec per site (e.g., oxide film)
Data Acquisition Time 0.2 sec

Performance Specifications

Film(s) Thickness Measured Parameters Precision ()
Oxide / Si 200 - 500 Å t 0.5 Å
500 - 10,000 Å t 0.25 Å
1000 Å t , n 0.25 Å / 0.001
Nitride / Si 200 - 10,000 Å t 0.25 Å
Photoresist / Si 200 - 10,000 Å t 0.5 Å
a-Si / Oxide / Si 200 - 10,000 Å t 0.5 Å

Contact Us

Input value is invalid.

* Please fill out the mandatory fields.

Please enter your first name
Please enter your last name
Please enter your e-mail address
Please enter a valid phone number
Please enter your Company/Institution
What best describes your current interest?
Join our email subscription list to receive related webinar invitations, product announcements, and information about upcoming events near you.
Please accept the Terms and Conditions