Ellipsometers and Reflectometers

FilmTek 2000 PAR

Micro-spot DUV-NIR spectroscopic reflectometry for patterned wafers

Destaques

FilmTek 2000 PAR

The FilmTek™ 2000 PAR benchtop spectroscopic reflectometer is an economical solution for high-throughput, fully automated mapping of patterned wafers in R&D and production environments. It is specifically designed to address a broad range of wafer-based technology applications in silicon semiconductor, LED/OLED, and data storage.

 

Expanding upon FilmTek 2000's proprietary DUV-NIR spectroscopic reflectometry technology, FilmTek 2000 PAR features integrated automated wafer handling, pattern recognition, and patented parabolic mirror-based micro-spot measurement capabilities (50 µm standard, down to 13 µm). This system delivers best-in-class measurement of patterned wafers that is more efficient, intuitive, and sensitive to local non-uniformity than comparable reflectometers, even on challenging samples.

 

The FilmTek 2000 PAR's fully integrated, advanced material modeling software supports both built-in standard and user-defined wafer map patterns, providing rapid generation of 2D and 3D data maps of any measured parameter. Optional Cognex pattern recognition, cassette-to-cassette wafer handling, and SECS/GEM compatibility can be added to further optimize the system's measurement capabilities and performance to your specific application.

Wafer-mapping
hardware configuration
Provides targeted, best-in-class solution for patterned wafer characterization in R&D and production.
Micro-spot
parabolic-mirror-based measurements
Deliver coherent reflection data that is highly sensitive to local non-uniformity in samples.
High-throughput
fully automated operation
Enables faster, more efficient wafer mapping.
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Características

Features

Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
  • Surface roughness
  • Constituent, void fraction
  • Crystallinity/Amorphization (e.g., of Poly-Si, GeSbTe films)
  • Film gradient

System Components

Standard:

  • DUV-NIR fiber-optic spectrophotometer
  • Spectroscopic reflection measurement
  • Patented parabolic mirror technology
  • Automated stage with autofocus
  • Automated wafer handling
  • Camera for imaging measurement location
  • Pattern recognition
  • 50 micron spot size (standard)
  • Advanced material modeling software
  • Bruker's generalized material model with advanced global optimization algorithms

Optional:

  • Small spot size (13 µm)
  • Pattern recognition (Cognex)
  • Cassette to cassette wafer handling
  • SECS/GEM compatibility

Aplicações

Applications

Typical Application Areas

Virtually all translucent films ranging in thickness from less than 100 Å to approximately 150 µm can be measured with high precision. Typical application areas include:

  • Semiconductor and dielectrics
  • Data storage
  • LED/OLED

With flexible hardware and software that can be easily modified to satisfy unique customer requirements in R&D and production environments.

Especificações

Technical Specifications

Film Thickness Range 3 nm to 150 µm
Film Thickness Accuracy ±1.5 Å for NIST traceable standard oxide 1000 Å to 1 µm
Spectral Range 190 nm - 1700 nm (240 nm - 1000 nm is standard)
Measurement Spot Size 13 µm - 300 µm (50 µm is standard)
Wafer Size 50 mm - 300 mm (150 mm standard)
Spectral Resolution 0.3 - 2 nm
Light Source Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector Type 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer Multi-core processor with Windows™ 10 Operating System
Measurement Time <1 sec per site (e.g., oxide film)
Data Acquisition Time 0.2 sec

Performance Specifications

Film(s) Thickness Measured Parameters Precision ()
Oxide / Si 200 - 500 Å t 0.5 Å
500 - 10,000 Å t 0.25 Å
1000 Å t , n 0.25 Å / 0.001
Nitride / Si 200 - 10,000 Å t 0.25 Å
Photoresist / Si 200 - 10,000 Å t 0.5 Å
a-Si / Oxide / Si 200 - 10,000 Å t 0.5 Å

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