Year |
Technology |
Current Tool |
Description |
Reference/DOI |
Publisher |
Authors |
2018 |
HRXRD |
JVX7300LSI |
High-Resolution X-Ray Diffraction Characterization and Metrology for Advanced Logic |
31, 1068-1068 |
Meeting Abstracts |
The Electrochemical Society Wormington, Matthew; Ryan, Paul A; Kasper, Nikolai; Gin, Peter; |
2017 |
HRXRD |
JVX7300LSI |
Processing technologies for advanced Ge devices |
6, 1, P14-P20 |
ECS Journal of Solid State Science and Technology |
Loo, Roger; Hikavyy, Andriy Yakovitch; Witters, Liesbeth; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Mitard, Jerome; Porret, Clement; Mertens, Hans; Ryan, Paul; |
2017 |
XRDI |
JVSensus - QCTT |
Crystalline damage in silicon wafers and'rare event'failure introduced by low-energy mechanical impact |
63, 40-44 |
Materials Science in Semiconductor Processing |
Atrash, F; Meshi, I; Krokhmal, A; Ryan, P; Wormington, M; Sherman, D; |
2017 |
HRXRD |
JVX7300LSI |
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures |
28, 14, 145703 |
Nanotechnology |
Schulze, Andreas; Loo, Roger; Ryan, Paul; Wormington, Matthew; Favia, Paola; Witters, Liesbeth; Collaert, Nadine; Bender, H; Vandervorst, W; Caymax, M; |
2017 |
HRXRD |
JVX7300LSI |
Strain and Compositional Analysis of (Si) Ge Fin Structures Using High Resolution X‐Ray Diffraction |
14, 12, 1700156 |
physica status solidi c |
Schulze, Andreas; Loo, Roger; Witters, Liesbeth; Mertens, Hans; Gawlik, Andrzej; Horiguchi, Naoto; Collaert, Nadine; Wormington, Matthew; Ryan, Paul; Vandervorst, Wilfried; |
2017 |
HRXRD |
JVX7300LSI |
Strain and composition monitoring in various (Si) Ge fin structures using in-line HRXRD |
|
|
Schulze, Andreas; Loo, Roger; Witters, Liesbeth; Mertens, Hans; Collaert, Nadine; Horiguchi, Naoto; Wormington, Matthew; Ryan, Paul; Vandervorst, Wilfried; Caymax, Matty; |
2017 |
XRDI |
JVSensus - QCTT |
Gate Oxide Yield Improvement for 0.18μm Power Semiconductor Devices with Deep Trenches |
|
978-1-5090-5448-0/17/$31.00 ©2017 IEEE |
|
2017 |
HRXRD / XRR |
JVX7300LSI / JVX7300HR |
Materials characterization for process integration of multi-channel gate all around (GAA) devices |
|
Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101451U (2017) |
Gangadhara Raja Muthinti; Nicolas Loubet; Robin Chao; Abraham A. de la Peña; Juntao Li; Michael A. Guillorn; Tenko Yamashita; Sivananda Kanakasabapathy; John Gaudiello; Aron J. Cepler; Matthew Sendelbach; Susan Emans; Shay Wolfling; Avron Ger; Daniel Kandel; Roy Koret; Wei Ti Lee; Peter Gin; Kevin Matney; Matthew Wormington |
2016 |
HRXRD |
JVX7300LSI |
Inline monitoring of SiGe strain relaxed buffers (SRBs) using high-resolution X-ray diffraction: AM: Advanced metrology |
44-49 |
Advanced Semiconductor Manufacturing Conference (ASMC), 2016 27th Annual SEMI |
Mendoza, B; L'Herron, B; Loubet, N; Fronheiser, J; Reznicek, A; Gaudiello, J; Gin, P; Matney, KM; Wall, J; Ryan, P; |
2016 |
HRXRD |
JVX7300LSI |
Advanced in-line metrology strategy for self-aligned quadruple patterning |
|
Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 977813 (2016) |
Robin Chao; Mary Breton; Benoit L'herron; Brock Mendoza; Raja Muthinti; Florence Nelson; Abraham De La Pena; Fee li Le; Eric Miller; Stuart Sieg; James Demarest; Peter Gin; Matthew Wormington; Aron Cepler; Cornel Bozdog; Matthew Sendelbach; Shay Wolfling; Tom Cardinal; Sivananda Kanakasabapathy; John Gaudiello; Nelson Felix |
2016 |
XRDI |
JVSensus - QCTT |
Imaging of strain from deep trenches using XRDI |
|
978-1-4673-8259-5/16/$31.00 c 2016 IEEE |
|
2014 |
HRXRD |
JVX7300LSI |
Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) |
|
AIP |
|
2014 |
HRXRD |
JVX7300LSI / JVX7300HR |
Benefit of Combining Metrology Techniques for Thin SiGe Layers |
|
ASMC |
|
2014 |
HRXRD |
JVX7300LSI |
Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1−xGex/Si fin structures using x-ray reciprocal space maps |
|
AIP |
|
2014 |
HRXRD |
JVX7300LSI |
Selective-Area Metal Organic Vapor-Phase Epitaxy of InGaAs/InP Heterostrucures On Si For Advanced CMOS Devices |
61, 2, 107-112 |
ECS Transactions |
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Ryan, Paul; Collaert, Nadine; Caymax, Matty; Barla, Kathy; Heyns, Marc; Thean, Aaron; |
2014 |
HRXRD |
JVX7300LSI |
Use of X-ray techniques in the development and production of novel transistor structures |
39-40 |
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International |
Hikavyy, Andriy; Rosseel, Erik; Witters, Liesbeth; Mertens, Hans; Ryan, Paul; Langer, Robert; Loo, Roger; |
2014 |
HRXRD |
JVX7300LSI |
Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) |
|
Journal of Vacuum Science & Technology B 32, 061805 (2014) |
|
2014 |
HRXRD / XRR |
JVX7300LSI |
Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1−xGex/Si fin structures using x-ray reciprocal space maps |
|
Journal of Vacuum Science & Technology B 32, 021804 (2014); |
Manasa Medikonda, Gangadhara R. Muthinti, Jody Fronheiser, Vimal Kamineni, Matthew Wormington, Kevin Matney, Thomas N. Adam, Evguenia Karapetrova, Alain C. Diebold |
2014 |
HRXRD / XRR |
JVX7300LSI |
Combining metrology techniques for in-line control of thin SiGe:B layers |
|
J. of Micro/Nanolithography, MEMS, and MOEMS, 13(4), 041402 (2014). |
Delphine Le Cunff; Thomas Nguyen; Romain Duru; Francesco Abbate; Jonny Hoglund; Nicolas Laurent; Frederic Pernot; Matthew Wormington |
2014 |
XRDI |
JVSensus - QCTT |
X-ray Specs for Solar Cells |
|
Photovoltaics International 25 (Third Quarter, September 2014) 22-30. |
Tamzin Lafford, Richard Bytheway and Daniel Bright |
2013 |
HRXRD |
JVX7300LSI |
Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures |
50, 6, 341-350 |
ECS Transactions |
Hung, PY; Wormington, Matthew; Matney, Kevin; Ryan, Paul; Dunn, Kathleen; Wang, Albert; Hill, Richard; Wong, Man-Hoi; Price, Jimmy; Wang, Wei-E; |
2013 |
XRDI |
JVSensus - QCTT |
X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers |
DOI:10.1017/S0885715613000122 |
Powder Diffraction. [Online] 28 (02), 95–99 |
Tanner, B.K., Wittge, J., Vagovič, P., Baumbach, T., et al. |
2012 |
XRDI |
JVSensus - QCTT |
Prediction of the propagation probability of individual cracks in brittle single crystal materials |
|
AIP |
|
2012 |
XRDI |
JVSensus - QCTT |
Slip band distribution in rapid thermally annealed silicon wafers. |
DOI:10.1063/1.4709446. |
Journal of Applied Physics. [Online] 111 (9), 094901 |
Garagorri, J., Elizalde, M.R., Fossati, M.C., Jacques, D., et al. |
2012 |
XRDI |
JVSensus - QCTT |
Prediction of the propagation probability of individual cracks in brittle single crystal materials |
DOI:10.1063/1.4738994 |
Applied Physics Letters. [Online] 101 (4), 041903 |
Tanner, B.K., Fossati, M.C., Garagorri, J., Elizalde, M.R., et al. |
2011 |
HRXRD - XRR |
JVX7300LSI / JVX7300HR |
Metrology of epitaxial thin-films by advanced HRXRD and XRR |
|
Electro IQ |
|
2011 |
HRXRD / XRR |
JVX7300HR |
A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology |
|
FCMN2011 |
|
2011 |
XRDI |
JVSensus - QCTT |
Thermal slip sources at the extremity and bevel edge of silicon wafers |
DOI:10.1107/S0021889811012088 |
Journal of Applied Crystallography. [Online] 44 (3), 489–494 |
Tanner, B.K., Wittge, J., Allen, D., Fossati, M.C., et al |
2010 |
HRXRD |
QC3 / QCVelox |
Production metrology of advanced LED structures using high-resolution X-ray diffraction |
|
Solid State Technology |
|
2010 |
XRDI |
JVSensus - QCTT |
Dislocation sources and slip band nucleation from indents on silicon wafers |
DOI:10.1107/S0021889810029894 |
Journal of Applied Crystallography. [Online] 43 (5-1), 1036–1039 |
Wittge, J., Danilwesky, A.N., Allen, D., McNally, P.J., et al. |
2010 |
XRDI |
JVSensus - QCTT |
X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers |
DOI:10.1154/1.3392369 |
Powder Diffraction. [Online] 25 (Special Issue 02), 99–103 |
Wittge, J., Danilwesky, A.N., Allen, D., McNally, P.J., et al. |
2008 |
HRXRD |
QC3 / QCVelox |
Mosaicity and stress effects on luminescence properties of GaN |
|
Physica Status Solidi (a) |
|
2008 |
|
JVX7300LSI |
In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction |
|
|
Hikavyy, A; Nguyen, Ngoc Duy; Loo, R; Ryan, P; Wormington, M; Hopkins, J; |
2007 |
HRXRD |
|
Asymmetric Relaxation of SiGe in Patterned Si Line Structures |
|
AIP conference proceedings 931, 1, 220-225 |
|
2007 |
HRXRD |
QC3 / QCVelox |
Effect of thickness on structural and electrical properties of GaN films Grown on SiN-treated sapphire |
|
Journal of Crystal Growth |
|
2007 |
HRXRD |
JVX7300LSI |
Asymmetric Relaxation of SiGe in Patterned Si Line Structures |
|
AIP Conf. Proc. |
|
2007 |
HRXRD |
JVX7300LSI - JV-DX |
In-line characterization of HBT base layers by high-resolution X-ray diffraction |
|
ECS Trans. |
|
2007 |
HRXRD |
JVX7300LSI - JV-DX |
X-ray metrology tool for new device materials and structures |
|
Fabtech Semiconductor |
|
2007 |
XRR |
JVX7300LSI - JV-DX |
Ultra Low-κ Metrology Using X-Ray Reflectivity And Small-Angle X-Ray Scattering Techniques |
|
AIP Conf. Proc. |
|
2007 |
XRF |
JVX6200F - JVX7300F-W |
Under-bump Metallization (UBM) Control using X-ray Fluorescence (XRF) |
|
AIP Conf. Proc. |
|
2007 |
XRR |
JVX7300RF-T |
CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) using X-ray Reflectivity |
|
AIP Conf. Proc. |
|
2007 |
XRR |
JVX7300LSI |
Characterization of Surface Preparation for Epitaxial SiGe Process using X-ray Reflectivity |
|
ECS Trans. |
|
2007 |
|
|
Advanced Metrology for Porous Low-k Integration into Cu back-end Processes |
1-Sep |
ECS Transactions |
Ryan, Paul A; Bytheway, Richard; Gibson, Gary; Koga, Kazuhiro; |
2007 |
HRXRD |
JVX7300LSI / JVX7300HR |
In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction |
|
ECS Transactions 10, 1, 151-160 |
Nguyen, Ngoc Duy; Loo, Roger; Hikavyy, Andriy; Van Daele, Benny; Ryan, Paul; Wormington, Matthew; Hopkins, John; |
2007 |
|
|
X-ray metrology for the semiconductor industry |
|
ECS Transactions 11, 3, 257-271 |
Bowen, Keith; Ryan, Paul; |
2006 |
XRR - XRF |
JVX7300RF-T |
Application of x-ray metrology in the characterization of metal gate thin films |
|
J. Vac. Sci. Technol. B |
|
2006 |
XRR - XRD |
JVX7300LSI - JV-DX |
Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility |
|
J. Appl. Phys. |
|
2006 |
HRXRD |
JVX7300LSI - JV-DX |
Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels |
|
ECS Trans. |
|
2005 |
XRR |
|
Combined XRR and RS Measurements of Nickel Silicide Films |
|
AIP Conf. Proc. |
|
2005 |
HRXRD - XRR |
|
Accuracy and Repeatability of X-Ray Metrology |
|
AIP Conf. Proc. |
Lafford, TA; Ryan, PA; Joyce, DE; Goorsky, MS; Tanner, BK; |
2005 |
HRXRD |
|
Scans along arbitrary directions in Reciprocal space and the analysis of GaN films on SiC |
|
Journal of Physics D |
Wormington, Matthew; Lafford, Tamzin; Godny, Stéphane; Ryan, Paul; Loo, Roger; Hikavyy, Andriy; Bhouri, Nada; Caymax, Matty; |
2005 |
HRXRD |
|
MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells |
|
MRS |
|
2005 |
HRXRD |
|
Annealing effects on the temperature dependence of photoluminescence Characteristics of GaAsSbN single-quantum wells |
|
J. Appl. Phys. |
|
2003 |
HRXRD |
|
Direct measurement of twist mosaic in epitaxial GaN |
|
physica status solidi (a) 195,1,265-270 |
|